K4B4G1646E-BYK000 vs MT41K64M16TW-107 Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BYK000 dari Samsung Electronics dan MT41K64M16TW-107 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT41K64M16TW-107 - 1Gbit DDR3L SDRAM 1866MT/s | Micron Technology
MT41K64M16TW-107 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BYK000 | MT41K64M16TW-107 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | 1 Gbit |
| Organisasi | 256M x 16 | 64M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Paket | 96-FBGA (BYK) | 96-FBGA (8 x 14 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel | Parallel |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Fitur | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free, halogen-free suffix J) |
| Access Time | 1.25 ns | 20 ns |
| Laju Data | — | 1866 MT/s (DDR3-1866 speed grade -107) |
| Tegangan Pemuat | — | 1.35 V (1.283 V to 1.45 V) |
| Technology | — | CMOS DRAM |
| Refresh | — | Self refresh / auto refresh |
| Base Part Number | — | MT41K64M16 |
| Supply Voltage - DDR3 Compatible Mode | — | 1.5 V (refer to DDR3 datasheet specifications) |