K4B4G1646E-BYK000 vs MT41K64M16TW-107 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYK000 sa pamamagitan ng Samsung Electronics at MT41K64M16TW-107 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ NakahandaMicron Technology
MT41K64M16TW-107 - 1Gbit DDR3L SDRAM 1866MT/s | Micron Technology
MT41K64M16TW-107 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYK000 | MT41K64M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit | 1 Gbit |
| Organisasyon | 256M x 16 | 64M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Packhaging | 96-FBGA (BYK) | 96-FBGA (8 x 14 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Mga Karakteristika | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free, halogen-free suffix J) |
| Access Time | 1.25 ns | 20 ns |
| Rate ng Data | — | 1866 MT/s (DDR3-1866 speed grade -107) |
| Volte ng Pagbibigay | — | 1.35 V (1.283 V to 1.45 V) |
| Technology | — | CMOS DRAM |
| Refresh | — | Self refresh / auto refresh |
| Base Part Number | — | MT41K64M16 |
| Supply Voltage - DDR3 Compatible Mode | — | 1.5 V (refer to DDR3 datasheet specifications) |