K4RAH086VE-BCWM vs K4RBH086VB-BCQK Perbandingan
Perbandingan bersamaan detil K4RAH086VE-BCWM dari Samsung Electronics dan K4RBH086VB-BCQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VE-BCWM | K4RBH086VB-BCQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 5600 Mbps | 4800 Mbps |
| Supply Voltage (VDD) | 1.1 V | 1.1 V |
| Paket | 82-ball FBGA | FBGA-82 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| Latensi CAS | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | [DATA_NEEDED: refresh rate 32ms/64ms] |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Status Lingkungan Hidup | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Antarmuka | — | DDR5 (CA bus, ODECC) |
| On-die ECC | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 4800 Mbps] |
| Power Supply Rails | — | VDD/VDDQ 1.1 V (PMIC on module) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray or tape and reel standard quantity] |