K6F3216U6M-EF70T vs K6F2016U4D-FF70T00 Perbandingan
Perbandingan bersamaan detil K6F3216U6M-EF70T dari Samsung Electronics dan K6F2016U4D-FF70T00 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6F3216U6M-EF70T | K6F2016U4D-FF70T00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | SRAM - Asynchronous | Asynchronous SRAM |
| Ukuran Memori | 32 Mbit | 2 Mbit |
| Organisasi | 2M x 16 | 128K x 16 |
| Tegangan Pemuat | 3 V | — |
| Access Time | 55 ns | — |
| Antarmuka | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Full CMOS |
| Paket | 55-TFBGA (7.5 x 12 mm) | 48-FBGA (6x7 mm) chip-scale package |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | Industrial temperature range |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| Status RoHS | NO (per third-party listing) | [DATA_NEEDED: RoHS status] |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 70 ns |
| Supply Voltage (Vcc) | — | 2.7 V to 3.3 V |
| Write Cycle Time (tWP) | — | 50 ns |
| Speed Grades in Family | — | 55 ns, 70 ns |
| Power Feature | — | Super low power and low voltage |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |