K6F3216U6M-EF70T vs K6F2016U4D-FF70T00 比較
詳細並排比較 K6F3216U6M-EF70T 由 Samsung Electronics 與 K6F2016U4D-FF70T00 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ 啟用中規格比較
| 參數 | K6F3216U6M-EF70T | K6F2016U4D-FF70T00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SRAM - Asynchronous | Asynchronous SRAM |
| 記憶體容量 | 32 Mbit | 2 Mbit |
| 組織 | 2M x 16 | 128K x 16 |
| 供應電壓 | 3 V | — |
| Access Time | 55 ns | — |
| 介面 | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Full CMOS |
| 封裝 | 55-TFBGA (7.5 x 12 mm) | 48-FBGA (6x7 mm) chip-scale package |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature Range] | Industrial temperature range |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS 狀態 | NO (per third-party listing) | [DATA_NEEDED: RoHS status] |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 70 ns |
| Supply Voltage (Vcc) | — | 2.7 V to 3.3 V |
| Write Cycle Time (tWP) | — | 50 ns |
| Speed Grades in Family | — | 55 ns, 70 ns |
| Power Feature | — | Super low power and low voltage |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |