K6T0808C1D-DB55 vs K6T0808C1D-DB70 Perbandingan

Perbandingan bersamaan detil K6T0808C1D-DB55 dari Samsung Electronics dan K6T0808C1D-DB70 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K6T0808C1D-DB55 K6T0808C1D-DB55 - 32Kx8 Low Power CMOS SRAM | Samsung

K6T0808C1D-DB55 - 32Kx8 Low Power CMOS SRAM | Samsung

K6T0808C1D-DB55 Obsolete
Samsung Electronics
K6T0808C1D-DB70 K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung

K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung

K6T0808C1D-DB70 ⚠ Waktu Beli Terakhir

Perbandingan Spesifikasi

Parameter Umum K6T0808C1D-DB55 K6T0808C1D-DB70
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Waktu Pembelian Terakhir
Density 256 Kbit (32K x 8) 256 Kbit (32,768 bytes)
Tipe Memori Asynchronous Static RAM (SRAM) Volatile SRAM (Static RAM)
Organisasi 32,768 words x 8 bits —
Access Time (tAA) 70 ns (max) 70 ns
Supply Voltage (VCC) 5 V (typical; 4.5 V min per SRAM class) 4.5 V to 5.5 V
Suhu Kerja -40 C to +85 C (industrial) 0C to +70C (commercial)
Paket 28-pin TSOP1F (Type I, forward) DIP-28 (600 mil, 'DB' code)
Tipe Mounting Surface Mount Through-Hole
Process Technology Samsung advanced CMOS CMOS (6T cell)
Standby Current [DATA_NEEDED: typical ISB1 in uA] —
Operating Current [DATA_NEEDED: typical ICC in mA] —
Tipe Output Three-state, bidirectional DQs —
I/O Logic Level TTL-compatible —
Data Retention Voltage [DATA_NEEDED: VDR minimum in V] —
Level MSL [DATA_NEEDED: MSL classification] [DATA_NEEDED: MSL rating]
Status RoHS [DATA_NEEDED: verify on Samsung product page] [DATA_NEEDED: RoHS compliance status]
Lead-Free [DATA_NEEDED: confirm] —
Memory Organization — 32K x 8 = 256 Kbit
Operating Current (ICC) — 60 mA (typical)
Standby Current (ISB1) — 15 uA (typical)
Antarmuka — Parallel, asynchronous, TTL-compatible
Output Enable (OE) — Yes (active-low)
Write Enable (WE) — Yes (active-low)
Chip Enable — CE1 (active-low), CE2 (active-high)
Lebar Bus Data — 8 bits

Spek dan Sumber

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