K6T0808C1D-DB55 vs K6T0808C1D-DB70 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6T0808C1D-DB55 sa pamamagitan ng Samsung Electronics at K6T0808C1D-DB70 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | K6T0808C1D-DB55 | K6T0808C1D-DB70 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Huling Pagbili |
| Density | 256 Kbit (32K x 8) | 256 Kbit (32,768 bytes) |
| Uri ng Memory | Asynchronous Static RAM (SRAM) | Volatile SRAM (Static RAM) |
| Organisasyon | 32,768 words x 8 bits | — |
| Access Time (tAA) | 70 ns (max) | 70 ns |
| Supply Voltage (VCC) | 5 V (typical; 4.5 V min per SRAM class) | 4.5 V to 5.5 V |
| Temperature na Operasyon | -40 C to +85 C (industrial) | 0C to +70C (commercial) |
| Packhaging | 28-pin TSOP1F (Type I, forward) | DIP-28 (600 mil, 'DB' code) |
| Uri ng Pagpapasok | Surface Mount | Through-Hole |
| Process Technology | Samsung advanced CMOS | CMOS (6T cell) |
| Standby Current | [DATA_NEEDED: typical ISB1 in uA] | — |
| Operating Current | [DATA_NEEDED: typical ICC in mA] | — |
| Type ng Output | Three-state, bidirectional DQs | — |
| I/O Logic Level | TTL-compatible | — |
| Data Retention Voltage | [DATA_NEEDED: VDR minimum in V] | — |
| Level ng MSL | [DATA_NEEDED: MSL classification] | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | [DATA_NEEDED: verify on Samsung product page] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: confirm] | — |
| Memory Organization | — | 32K x 8 = 256 Kbit |
| Operating Current (ICC) | — | 60 mA (typical) |
| Standby Current (ISB1) | — | 15 uA (typical) |
| Interface | — | Parallel, asynchronous, TTL-compatible |
| Output Enable (OE) | — | Yes (active-low) |
| Write Enable (WE) | — | Yes (active-low) |
| Chip Enable | — | CE1 (active-low), CE2 (active-high) |
| Width ng Data Bus | — | 8 bits |