K9LCG08U1M vs K9MDG08U5M Perbandingan
Perbandingan bersamaan detil K9LCG08U1M dari Samsung Electronics dan K9MDG08U5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9LCG08U1M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NAND Flash, MLC | MLC Large Block NAND Flash |
| Density | 64 Gbit (8 GB) | 16 Gbit (2 GB) |
| Organisasi | x8 I/O | 16G x 8 bit |
| Antarmuka | Asynchronous multiplexed NAND I/O | Asynchronous x8 multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Paket | BGA | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |