K9LCG08U1M vs K9MDG08U5M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9LCG08U1M disebabkan oleh Samsung Electronics dan K9MDG08U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9LCG08U1M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NAND Flash, MLC | MLC Large Block NAND Flash |
| Density | 64 Gbit (8 GB) | 16 Gbit (2 GB) |
| Organisasi | x8 I/O | 16G x 8 bit |
| Antaramuka | Asynchronous multiplexed NAND I/O | Asynchronous x8 multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Kemasan | BGA | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |