K9MDG08U5M vs K9XXG08UXM Perbandingan
Perbandingan bersamaan detil K9MDG08U5M dari Samsung Electronics dan K9XXG08UXM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9MDG08U5M | K9XXG08UXM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Tipe Memori | MLC Large Block NAND Flash | — |
| Density | 16 Gbit (2 GB) | — |
| Organisasi | 16G x 8 bit | — |
| Cell Type | MLC (2 bits per cell) | SLC (single-level cell) NAND |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antarmuka | Asynchronous x8 multiplexed address/data | — |
| Paket | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Ukuran Memori | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Tegangan Pemuat | — | 2.7 V to 3.6 V |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |