K9MDG08U5M vs K9XXG08UXM Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9MDG08U5M disebabkan oleh Samsung Electronics dan K9XXG08UXM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9MDG08U5M | K9XXG08UXM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | MLC Large Block NAND Flash | — |
| Density | 16 Gbit (2 GB) | — |
| Organisasi | 16G x 8 bit | — |
| Cell Type | MLC (2 bits per cell) | SLC (single-level cell) NAND |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antaramuka | Asynchronous x8 multiplexed address/data | — |
| Kemasan | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Saiz Ingatan | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Tegangan Pemberi Arus | — | 2.7 V to 3.6 V |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |