LMG3522R030RQSR vs LMG3422R030RQZT Perbandingan
Perbandingan bersamaan detil LMG3522R030RQSR dari Texas Instruments dan LMG3422R030RQZT dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
LMG3522R030RQSR - 650V 30mΩ GaN FET with Integrated Driver | TI
LMG3522R030RQSR ✓ AktifTexas Instruments
LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
LMG3422R030RQZT ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | LMG3522R030RQSR | LMG3422R030RQZT |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 650 V | 600 V |
| RDS(on) (Typical) | 30 mΩ | — |
| Continuous Drain Current (ID) | 55 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: Pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: Gate-source voltage range] | — |
| Integrated Driver | Yes (half-bridge) | Yes |
| Protection Features | Overcurrent, overtemperature, temperature reporting | — |
| Paket | 52-VQFN (12x12 mm) Exposed Pad | 54-VQFN (12x12 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Operating temperature range] | — |
| Automotive Grade | Available (Q1 variant, AEC-Q100) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Tahanan Panas, Hubung-lingkungan | [DATA_NEEDED: Thermal resistance] | — |
| Frekuensi Pengganti | [DATA_NEEDED: Maximum switching frequency] | 2.2 MHz |
| On-Resistance (RDS(on)) | — | 30 mΩ |
| Continuous Drain Current | — | 40 A |
| Slew Rate | — | 20 V/ns to 150 V/ns |
| FET Hold-off | — | 200 V/ns |
| Protection | — | Overcurrent, Overtemperature |
| Temperature Reporting | — | Yes |
| Qualification | — | JEDEC JEP180 |
| Gate Drive Strength | — | Adjustable |
| Suhu Kerja | — | -40°C to +125°C |