M29DW323DB70N3E vs M29W160EB70N3E Perbandingan
Perbandingan bersamaan detil M29DW323DB70N3E dari Micron Technology dan M29W160EB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29DW323DB70N3E | M29W160EB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Flash - NOR | FLASH - NOR |
| Memory Format | FLASH | — |
| Technology | FLASH - NOR Memory IC | — |
| Density | 32 Mb (4M x 8, 2M x 16) | — |
| Memory Organization | 4M x 8 / 2M x 16 | — |
| Antarmuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 3 V class (per manufacturer datasheet) | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Boot Block Location | Bottom (DB variant) | — |
| Byte/Word Organization Select | Yes (BYTE pin) | — |
| Applications Domain | Embedded code storage / XIP | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Standard Pack Quantity | [DATA_NEEDED: standard pack quantity] | — |
| Ukuran Memori | — | 16 Mbit (2M x8, 1M x16) |
| Organisasi | — | 2M x8 / 1M x16 |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Paket / Case | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |