M29F200FB55N3E2 vs M29F200FB55N3F2 Perbandingan

Perbandingan bersamaan detil M29F200FB55N3E2 dari Micron Technology dan M29F200FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F200FB55N3E2 M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 ✗ Akhir Hidup
Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F200FB55N3E2 M29F200FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Akhir Hidup Aktif
Tipe Memori NOR Flash, Parallel Parallel NOR Flash
Density 2 Mbit (2097 kbits) 2 Mbit (2097 kbits)
Organisasi 256K x 8 / 128K x 16 256K x 8 bit / 128K x 16 bit
Number of Words 128 K 128 K (x16 mode)
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V
Boot Block Architecture Bottom Boot Block Bottom Boot Block (FB)
Antarmuka Parallel, 8/16-bit selectable Parallel
Program/Erase Controller Embedded byte/word program algorithms —
Suhu Kerja -40C to +125C -40C to +125C
Package Type 48-pin TSOP I —
Tipe Mounting Surface Mount Surface Mount
Memory Cell Type SLC NOR —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Packaging Tray Tape & Reel (TR)
Programming — Embedded byte/word program algorithm
Erase — Embedded block erase controller
Paket — 48-TSOP I
Endurance — [DATA_NEEDED: program/erase cycles]

Spek dan Sumber

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