M29F200FB55N3E2 vs M29F200FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FB55N3E2 disebabkan oleh Micron Technology dan M29F200FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron
M29F200FB55N3E2 ✗ Akhir HayatMicron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F200FB55N3E2 | M29F200FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | NOR Flash, Parallel | Parallel NOR Flash |
| Density | 2 Mbit (2097 kbits) | 2 Mbit (2097 kbits) |
| Organisasi | 256K x 8 / 128K x 16 | 256K x 8 bit / 128K x 16 bit |
| Number of Words | 128 K | 128 K (x16 mode) |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block (FB) |
| Antaramuka | Parallel, 8/16-bit selectable | Parallel |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Package Type | 48-pin TSOP I | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Cell Type | SLC NOR | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Packaging | Tray | Tape & Reel (TR) |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Kemasan | — | 48-TSOP I |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |