M29F200FB55N3E2 vs M29F200FB55N3F2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F200FB55N3E2 sa pamamagitan ng Micron Technology at M29F200FB55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron
M29F200FB55N3E2 ✗ Tapus ng BuhayMicron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F200FB55N3E2 | M29F200FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Aktibo |
| Uri ng Memory | NOR Flash, Parallel | Parallel NOR Flash |
| Density | 2 Mbit (2097 kbits) | 2 Mbit (2097 kbits) |
| Organisasyon | 256K x 8 / 128K x 16 | 256K x 8 bit / 128K x 16 bit |
| Number of Words | 128 K | 128 K (x16 mode) |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block (FB) |
| Interface | Parallel, 8/16-bit selectable | Parallel |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Package Type | 48-pin TSOP I | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Cell Type | SLC NOR | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Packaging | Tray | Tape & Reel (TR) |
| Programming | — | Embedded byte/word program algorithm |
| Erase | — | Embedded block erase controller |
| Packhaging | — | 48-TSOP I |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |