M29F400FB55N3F2 vs M29F800FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F400FB55N3F2 dari Micron Technology dan M29F800FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F400FB55N3F2 | M29F800FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | — |
| Density | 4 Mbit (4194 kbit) | — |
| Organisasi | 256K x 16 / 512K x 8 | 1M x 8 / 512K x 16 |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | 5 V |
| Antarmuka | Parallel | — |
| Boot Block | Bottom boot block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | Embedded byte/word program algorithms |
| Paket | 48-TSOP I | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| Status RoHS | Compliant (lead-free build per F2 suffix) | Compliant (lead-free terminations) |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Tipe Antarmuka | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |