M29F400FB55N3F2 vs M29F800FB55N3F2 比較
詳細並排比較 M29F400FB55N3F2 由 Micron Technology 與 M29F800FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F400FB55N3F2 | M29F800FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | — |
| Density | 4 Mbit (4194 kbit) | — |
| 組織 | 256K x 16 / 512K x 8 | 1M x 8 / 512K x 16 |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | 5 V |
| 介面 | Parallel | — |
| Boot Block | Bottom boot block | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | Embedded byte/word program algorithms |
| 封裝 | 48-TSOP I | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS 狀態 | Compliant (lead-free build per F2 suffix) | Compliant (lead-free terminations) |
| Memory Density | — | 8389 kbits (8 Mbit) |
| 介面類型 | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |