M29F800FT55M3E2 vs M29F800FB55M3E2 Perbandingan

Perbandingan bersamaan detil M29F800FT55M3E2 dari Micron Technology dan M29F800FB55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Aktif
Micron Technology
M29F800FB55M3E2 M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FB55M3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FT55M3E2 M29F800FB55M3E2
Merek Micron Technology Micron Technology
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash Parallel NOR Flash
Ukuran Memori 8 Mbit —
Organisasi 512K x 16 bit 512K x 16 / 1M x 8
Antarmuka Parallel —
Access Time 55 ns 55 ns
Tegangan Pemuat 5 V —
Suhu Kerja -40C to +125C -40C to +125C
Boot Block Location Top boot block —
Program/Erase Cycles 100,000 per block —
Program Algorithm Embedded byte/word program —
Erase Features Erase suspend and resume —
Standby Mode Automatic standby, low power —
Identification Electronic signature —
Paket 44-SO (SOP) 44-pin SO (SOP)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (E suffix) Compliant (E suffix, RoHS-compliant package)
Density 8389 kbits 8 Mbit (8389 kbits)
Supply Voltage (VCC) — 5 V
Boot Block — Bottom boot block
Automotive Qualification — AEC-Q100 (Auto Grade 125C)
Program / Erase — Embedded byte/word program and erase controller
Number of Words — 512 k
Bits per Word — 16 bits
Standard Packing — Tray
Family — M29F 200/400/800 5V Parallel NOR Flash

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