M29F800FT55M3E2 vs M29F800FB55M3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FT55M3E2 disebabkan oleh Micron Technology dan M29F800FB55M3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FT55M3E2 | M29F800FB55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | Parallel NOR Flash |
| Saiz Ingatan | 8 Mbit | — |
| Organisasi | 512K x 16 bit | 512K x 16 / 1M x 8 |
| Antaramuka | Parallel | — |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Boot Block Location | Top boot block | — |
| Program/Erase Cycles | 100,000 per block | — |
| Program Algorithm | Embedded byte/word program | — |
| Erase Features | Erase suspend and resume | — |
| Standby Mode | Automatic standby, low power | — |
| Identification | Electronic signature | — |
| Kemasan | 44-SO (SOP) | 44-pin SO (SOP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (E suffix) | Compliant (E suffix, RoHS-compliant package) |
| Density | 8389 kbits | 8 Mbit (8389 kbits) |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block | — | Bottom boot block |
| Automotive Qualification | — | AEC-Q100 (Auto Grade 125C) |
| Program / Erase | — | Embedded byte/word program and erase controller |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Standard Packing | — | Tray |
| Family | — | M29F 200/400/800 5V Parallel NOR Flash |