M29W256GH70N3E vs M29W128GL70N3E Perbandingan
Perbandingan bersamaan detil M29W256GH70N3E dari Micron Technology dan M29W128GL70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W256GH70N3E | M29W128GL70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 256 Mbit (32 MB) | 128 Mbit |
| Organisasi | 32M x 8 / 16M x 16 | 16M x8 / 8M x16 |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 3 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Antarmuka | Parallel (asynchronous) | Parallel |
| Paket | 56-TSOP | 56-pin TSOP |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lebar Bus Data | 8/16 bit (BYTE# selectable) | — |
| Programming Type | Command-set program/erase, block organized | — |
| Common Flash Interface | Yes (CFI) | — |
| Product Longevity Program | No (per family data) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |