M29W256GH70N3E vs M29W128GL70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W256GH70N3E disebabkan oleh Micron Technology dan M29W128GL70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W256GH70N3E M29W256GH70N3E - 256Mb Parallel NOR Flash 70ns | Micron

M29W256GH70N3E - 256Mb Parallel NOR Flash 70ns | Micron

M29W256GH70N3E ✓ Aktif
Micron Technology
M29W128GL70N3E M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W256GH70N3E M29W128GL70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Flash
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash (Parallel) NOR Flash (Parallel)
Density 256 Mbit (32 MB) 128 Mbit
Organisasi 32M x 8 / 16M x 16 16M x8 / 8M x16
Access Time 70 ns 70 ns
Tegangan Pemberi Arus 3 V 2.7 V to 3.6 V (3V/3.3V class)
Antaramuka Parallel (asynchronous) Parallel
Kemasan 56-TSOP 56-pin TSOP
Suhu Operasi -40C to +125C -40C to +125C
Jenis Pemasangan Surface Mount Surface Mount
Lebar Bus Data 8/16 bit (BYTE# selectable) —
Programming Type Command-set program/erase, block organized —
Common Flash Interface Yes (CFI) —
Product Longevity Program No (per family data) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Endurance [DATA_NEEDED: program/erase endurance cycles] —
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Boot Block Configuration — Bottom boot (GL suffix)
Packaging — Tray
Automotive Qualification — Automotive grade ordering code (N3E)
Bus Width Mode — Software-selectable x8/x16 (BYTE# pin)
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]

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