M29W256GH70N3E vs M29W128GL70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W256GH70N3E sa pamamagitan ng Micron Technology at M29W128GL70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W256GH70N3E - 256Mb Parallel NOR Flash 70ns | Micron
M29W256GH70N3E ✓ NakahandaMicron Technology
M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron
M29W128GL70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W256GH70N3E | M29W128GL70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Flash |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash (Parallel) | NOR Flash (Parallel) |
| Density | 256 Mbit (32 MB) | 128 Mbit |
| Organisasyon | 32M x 8 / 16M x 16 | 16M x8 / 8M x16 |
| Access Time | 70 ns | 70 ns |
| Volte ng Pagbibigay | 3 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Interface | Parallel (asynchronous) | Parallel |
| Packhaging | 56-TSOP | 56-pin TSOP |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Width ng Data Bus | 8/16 bit (BYTE# selectable) | — |
| Programming Type | Command-set program/erase, block organized | — |
| Common Flash Interface | Yes (CFI) | — |
| Product Longevity Program | No (per family data) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |