MPX5010D vs MPX5010DP Perbandingan
Perbandingan bersamaan detil MPX5010D dari NXP Semiconductors dan MPX5010DP dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MPX5010D | MPX5010DP |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) max | — |
| Tipe Output | Analog Voltage | Analog, ratiometric |
| Rentang Tegangan Output | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tegangan Pemuat | 4.75 V to 5.25 V | 4.75 V to 5.25 V (5 V typical) |
| Port Size | Dual axial port (Differential) | — |
| Accuracy | [DATA_NEEDED: %FS] | — |
| Suhu Kerja | 0C to +85C (industrial-grade derivative supported to 40C to +125C) | 0 C to +85 C (compensated) |
| Paket / Case | 6-SIP Module (Case 867-08) | — |
| Tipe Mounting | Through-hole module | Through-hole (SIP) |
| Sensor Technology | Piezoresistive MEMS | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| Arus Pemuat | [DATA_NEEDED: mA] | [DATA_NEEDED: supply current mA] |
| Response Time | [DATA_NEEDED: ms] | — |
| Status RoHS | [DATA_NEEDED: verified per datasheet] | Compliant |
| Media Compatibility | Dry non-corrosive gases (air-referenced diaphragm) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Paket | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |