MPX5010D vs MPX5010DP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MPX5010D sa pamamagitan ng NXP Semiconductors at MPX5010DP sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MPX5010D - 10kPa Differential Pressure Sensor | NXP Semiconductors
MPX5010D ✓ NakahandaNXP Semiconductors
MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST
MPX5010DP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MPX5010D | MPX5010DP |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | Pressure Sensors | Pressure Sensors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors | — |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) max | — |
| Type ng Output | Analog Voltage | Analog, ratiometric |
| Hanay ng Output Volte | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Volte ng Pagbibigay | 4.75 V to 5.25 V | 4.75 V to 5.25 V (5 V typical) |
| Port Size | Dual axial port (Differential) | — |
| Accuracy | [DATA_NEEDED: %FS] | — |
| Temperature na Operasyon | 0C to +85C (industrial-grade derivative supported to 40C to +125C) | 0 C to +85 C (compensated) |
| Packhaging / Kaso | 6-SIP Module (Case 867-08) | — |
| Uri ng Pagpapasok | Through-hole module | Through-hole (SIP) |
| Sensor Technology | Piezoresistive MEMS | — |
| Signal Conditioning | On-chip, temperature compensated and calibrated | — |
| Kuru-kuryente ng Pagbibigay | [DATA_NEEDED: mA] | [DATA_NEEDED: supply current mA] |
| Response Time | [DATA_NEEDED: ms] | — |
| Tindminan RoHS | [DATA_NEEDED: verified per datasheet] | Compliant |
| Media Compatibility | Dry non-corrosive gases (air-referenced diaphragm) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Packhaging | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |