MRF5S19060NBR1 vs MRF5S19060MBR1 Perbandingan

Perbandingan bersamaan detil MRF5S19060NBR1 dari NXP Semiconductors dan MRF5S19060MBR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Aktif
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Perbandingan Spesifikasi

Parameter Umum MRF5S19060NBR1 MRF5S19060MBR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs RF Amplifiers
Status Lingkungan Hidup Aktif Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Tipe Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. 12 W
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14 dB
Drain Current 750 mA (typical operating DC) —
Paket TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Tipe Mounting Surface Mount (SMD) —
Jumlah Pin 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS RF Power Field Effect Transistor
Status RoHS [DATA_NEEDED: RoHS compliance status] —
Level MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Typical Operating Frequency — 1990 MHz
Drain-Source Voltage (Rated) — 65 V
Nominal Drain Operating Voltage — 28 V
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Package Outline — Case 1486-03, Style 1
Gaya Mounting — Flange / surface mount with thermal pad
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

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