MRF5S19060NBR1 vs MRF5S19060MBR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S19060NBR1 sa pamamagitan ng NXP Semiconductors at MRF5S19060MBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Nakahanda
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Pagsanggunian na paghahambing

Parametro MRF5S19060NBR1 MRF5S19060MBR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs RF Amplifiers
Katayuan ng Lifecycle Aktibo Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. 12 W
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14 dB
Drain Current 750 mA (typical operating DC) —
Packhaging TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Uri ng Pagpapasok Surface Mount (SMD) —
Bilang ng Pin 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS RF Power Field Effect Transistor
Tindminan RoHS [DATA_NEEDED: RoHS compliance status] —
Level ng MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Typical Operating Frequency — 1990 MHz
Drain-Source Voltage (Rated) — 65 V
Nominal Drain Operating Voltage — 28 V
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Package Outline — Case 1486-03, Style 1
Style ng Pagpapasok — Flange / surface mount with thermal pad
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

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