MRF6S19140HR5 vs MRF6S19140HSR5 Perbandingan

Perbandingan bersamaan detil MRF6S19140HR5 dari NXP Semiconductors dan MRF6S19140HSR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ Aktif
NXP Semiconductors
MRF6S19140HSR5 MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRF6S19140HR5 MRF6S19140HSR5
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
Tipe Transistor N-Channel RF Power LDMOS RF Power LDMOS (N-Channel)
Drain-Source Voltage (Vdss) 68 V (max) 68 V
Operating Drain Voltage (typical) 28 V 28 V
Pulsed Drain Current (Id) 1.15 A —
Output Power (Pout) 29 W (CW or pulsed) 29 W
Operating Frequency 1.93 GHz to 1.99 GHz —
Small-Signal Gain 16 dB (typical) —
Paket / Case NI-880H-2L ceramic flange NI-880S
Tipe Mounting Chassis / flange mount (bolt-down) Chassis Mount / Screw Clamp
Process Technology HV6 LDMOS —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead-Free [DATA_NEEDED: lead-free status] —
Rentang Suhu Kerja [DATA_NEEDED: operating temp range] —
Channel-to-Flange Thermal Resistance 0.45 C/W (estimated, datasheet figure) —
Original Manufacturer — Freescale Semiconductor
Part Status — Active
Drain Current (Id) — 1.15 A
Frequency Range — 1.93 GHz to 1.99 GHz
Power Gain (Gps) — 16 dB
Test Condition — Two-tone W-CDMA, 1.96 GHz
Suhu Kerja — -40 C to +150 C (junction)
ESD Protection — Yes (integrated)
Technology — HV6 LDMOS (later branded NXP HV6)

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