MRF6S19140HR5 vs MRF6S19140HSR5 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S19140HR5 tarafından NXP Semiconductors ve MRF6S19140HSR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
MRF6S19140HSR5 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF6S19140HR5 | MRF6S19140HSR5 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Transistor Türü | N-Channel RF Power LDMOS | RF Power LDMOS (N-Channel) |
| Drain-Source Voltage (Vdss) | 68 V (max) | 68 V |
| Operating Drain Voltage (typical) | 28 V | 28 V |
| Pulsed Drain Current (Id) | 1.15 A | — |
| Output Power (Pout) | 29 W (CW or pulsed) | 29 W |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Small-Signal Gain | 16 dB (typical) | — |
| Paket / Kas | NI-880H-2L ceramic flange | NI-880S |
| Montaj Türü | Chassis / flange mount (bolt-down) | Chassis Mount / Screw Clamp |
| Process Technology | HV6 LDMOS | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temp range] | — |
| Channel-to-Flange Thermal Resistance | 0.45 C/W (estimated, datasheet figure) | — |
| Original Manufacturer | — | Freescale Semiconductor |
| Part Status | — | Active |
| Drain Current (Id) | — | 1.15 A |
| Frequency Range | — | 1.93 GHz to 1.99 GHz |
| Power Gain (Gps) | — | 16 dB |
| Test Condition | — | Two-tone W-CDMA, 1.96 GHz |
| İşletim Sıcaklığı | — | -40 C to +150 C (junction) |
| ESD Protection | — | Yes (integrated) |
| Technology | — | HV6 LDMOS (later branded NXP HV6) |