MX30UF4G26AB vs MX30UF4G28AB Perbandingan

Perbandingan bersamaan detil MX30UF4G26AB dari Macronix dan MX30UF4G28AB dari Macronix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MX30UF4G26AB MX30UF4G28AB
Merek Macronix Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori FLASH - NAND (SLC) FLASH - NAND (SLC)
Memory Density 4 Gbit (512 MB) —
Memory Organization 256M x 16 512M x 8
Supply Voltage (Vcc) 1.7 V to 1.95 V —
Antarmuka Parallel (Asynchronous NAND) Parallel (asynchronous)
Access Time 25 ns —
Page Size [DATA_NEEDED: page size in bytes] 2048 bytes + 64 bytes spare (x8)
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
Suhu Kerja -40 C to +85 C -40 °C to +85 °C (industrial)
Paket 63-VFBGA (9 x 11 mm) 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI)
Tipe Mounting Surface Mount Surface Mount
Compliance Standard ONFI 1.0 —
Cell Technology Single-Level Cell (SLC) —
Endurance (P/E Cycles) [DATA_NEEDED: typical endurance per block] —
Data Retention [DATA_NEEDED: data retention years] [DATA_NEEDED: retention years]
Level MSL 3 3 (per JEDEC J-STD-020, typical for TSOP)
Status RoHS Compliant Compliant
Ukuran Memori — 4 Gbit
Bus Width — x8 / x16 selectable
Access Time (tRC) — 25 ns (typical)
Supply Voltage (VCC) — 1.7 V to 1.95 V (1.8 V typ)
Technology — SLC (Single-Level Cell) NAND
Program/Erase Cycles — [DATA_NEEDED: endurance per block]

Spek dan Sumber

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