MX30UF4G26AB vs MX30UF4G28AB 比較
詳細並排比較 MX30UF4G26AB 由 Macronix 與 MX30UF4G28AB 由 Macronix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MX30UF4G26AB | MX30UF4G28AB |
|---|---|---|
| 品牌 | Macronix | Macronix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NAND (SLC) | FLASH - NAND (SLC) |
| Memory Density | 4 Gbit (512 MB) | — |
| Memory Organization | 256M x 16 | 512M x 8 |
| Supply Voltage (Vcc) | 1.7 V to 1.95 V | — |
| 介面 | Parallel (Asynchronous NAND) | Parallel (asynchronous) |
| Access Time | 25 ns | — |
| Page Size | [DATA_NEEDED: page size in bytes] | 2048 bytes + 64 bytes spare (x8) |
| Block Size | [DATA_NEEDED: block size in pages] | [DATA_NEEDED: block size in pages] |
| 工作溫度 | -40 C to +85 C | -40 °C to +85 °C (industrial) |
| 封裝 | 63-VFBGA (9 x 11 mm) | 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI) |
| 安裝類型 | Surface Mount | Surface Mount |
| Compliance Standard | ONFI 1.0 | — |
| Cell Technology | Single-Level Cell (SLC) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical endurance per block] | — |
| Data Retention | [DATA_NEEDED: data retention years] | [DATA_NEEDED: retention years] |
| MSL 等級 | 3 | 3 (per JEDEC J-STD-020, typical for TSOP) |
| RoHS 狀態 | Compliant | Compliant |
| 記憶體容量 | — | 4 Gbit |
| Bus Width | — | x8 / x16 selectable |
| Access Time (tRC) | — | 25 ns (typical) |
| Supply Voltage (VCC) | — | 1.7 V to 1.95 V (1.8 V typ) |
| Technology | — | SLC (Single-Level Cell) NAND |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance per block] |