MX30UF4G26AB vs MX30UF4G28AB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MX30UF4G26AB disebabkan oleh Macronix dan MX30UF4G28AB disebabkan oleh Macronix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ Aktif

Pengandingan Spesifikasi

Parametr MX30UF4G26AB MX30UF4G28AB
Merek Macronix Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NAND (SLC) FLASH - NAND (SLC)
Memory Density 4 Gbit (512 MB) —
Memory Organization 256M x 16 512M x 8
Supply Voltage (Vcc) 1.7 V to 1.95 V —
Antaramuka Parallel (Asynchronous NAND) Parallel (asynchronous)
Access Time 25 ns —
Page Size [DATA_NEEDED: page size in bytes] 2048 bytes + 64 bytes spare (x8)
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
Suhu Operasi -40 C to +85 C -40 °C to +85 °C (industrial)
Kemasan 63-VFBGA (9 x 11 mm) 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI)
Jenis Pemasangan Surface Mount Surface Mount
Compliance Standard ONFI 1.0 —
Cell Technology Single-Level Cell (SLC) —
Endurance (P/E Cycles) [DATA_NEEDED: typical endurance per block] —
Data Retention [DATA_NEEDED: data retention years] [DATA_NEEDED: retention years]
Aras MSL 3 3 (per JEDEC J-STD-020, typical for TSOP)
Status RoHS Compliant Compliant
Saiz Ingatan — 4 Gbit
Bus Width — x8 / x16 selectable
Access Time (tRC) — 25 ns (typical)
Supply Voltage (VCC) — 1.7 V to 1.95 V (1.8 V typ)
Technology — SLC (Single-Level Cell) NAND
Program/Erase Cycles — [DATA_NEEDED: endurance per block]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga