MX30UF4G26AB vs MX30UF4G28AB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MX30UF4G26AB sa pamamagitan ng Macronix at MX30UF4G28AB sa pamamagitan ng Macronix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MX30UF4G26AB | MX30UF4G28AB |
|---|---|---|
| Brand | Macronix | Macronix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | FLASH - NAND (SLC) | FLASH - NAND (SLC) |
| Memory Density | 4 Gbit (512 MB) | — |
| Memory Organization | 256M x 16 | 512M x 8 |
| Supply Voltage (Vcc) | 1.7 V to 1.95 V | — |
| Interface | Parallel (Asynchronous NAND) | Parallel (asynchronous) |
| Access Time | 25 ns | — |
| Page Size | [DATA_NEEDED: page size in bytes] | 2048 bytes + 64 bytes spare (x8) |
| Block Size | [DATA_NEEDED: block size in pages] | [DATA_NEEDED: block size in pages] |
| Temperature na Operasyon | -40 C to +85 C | -40 °C to +85 °C (industrial) |
| Packhaging | 63-VFBGA (9 x 11 mm) | 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Compliance Standard | ONFI 1.0 | — |
| Cell Technology | Single-Level Cell (SLC) | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: typical endurance per block] | — |
| Data Retention | [DATA_NEEDED: data retention years] | [DATA_NEEDED: retention years] |
| Level ng MSL | 3 | 3 (per JEDEC J-STD-020, typical for TSOP) |
| Tindminan RoHS | Compliant | Compliant |
| Laki ng Memory | — | 4 Gbit |
| Bus Width | — | x8 / x16 selectable |
| Access Time (tRC) | — | 25 ns (typical) |
| Supply Voltage (VCC) | — | 1.7 V to 1.95 V (1.8 V typ) |
| Technology | — | SLC (Single-Level Cell) NAND |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance per block] |