NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology
MPN: NT6AN8T6WBJ1B1 ✓ AktifNT6AN8T6WBJ1B1 Ringkasan
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, offering improved power efficiency and bandwidth. DDR4 is the industry standard for main memory in servers, desktops, and laptops, and is also used in embedded systems requiring high-speed data processing.
Key features include a burst length of 8 (BL8) with burst chop (BC4), on-die termination (ODT) for signal integrity, and programmable CAS latency (CL) of 22 cycles. The device supports auto-refresh and self-refresh modes for power saving, and includes a temperature sensor for thermal management. The 1.2V supply reduces power consumption by up to 20% compared to DDR3L, making it suitable for energy-efficient designs.
Architecturally, the NT6AN8T6WBJ1B1 uses an 8n-prefetch architecture with a 16-bit I/O interface, achieving a peak bandwidth of 25.6 GB/s per module. It incorporates bank groups (4 groups of 4 banks) to improve concurrency and reduce latency. The device supports write leveling and read leveling for robust signal integrity in high-speed systems, and includes a built-in self-test (BIST) feature for manufacturing and system diagnostics.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing, networking equipment (routers, switches), and industrial automation. Its high density and speed make it ideal for servers and data centers requiring large memory capacity and fast data throughput.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins, and follow the JEDEC DDR4 layout guidelines for trace impedance (40-50 ohms) and length matching. The device requires a stable 1.2V supply and a separate 1.2V VDDQ for the I/O, with a reference voltage (VREF) of 0.6V.
Alternatif penggantian untuk NT6AN8T6WBJ1B1 — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian NT6AN8T6WBJ1B1 (sama faktor bentuk dan footprint) — berbeda di dalam Data Rate, Package, Burst Length, Operating Temperature, CAS Latency.
NT6AN8T0SA
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4A8G165WC-BCRC
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →MT40A512M16JY-075E
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →H5AN8G6NCJR-VKC
✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan✗ Habis Stok
$60 / Satuan
Lihat Datasheet →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →W634GU6RB09J
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →NT6AN8T6WBJ1B1 Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR4 SDRAM |
| Ukuran Memori | 8 Gb (512M x 16) |
| Laju Data | 3200 MT/s |
| Tegangan Pemuat | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Latensi CAS | 22 cycles |
| Burst Length | 8 (BL8), 4 (BC4) |
| Paket | 96-ball FBGA |
| Suhu Kerja | 0C to +95C (TC) |
| Refresh | Auto-refresh, self-refresh |
| On-Die Termination | Yes (ODT) |
| Bank Groups | 4 groups of 4 banks |
| Row Address | 16 bits |
| Column Address | 10 bits |
| Status RoHS | Compliant |
Konfigurasi Pin NT6AN8T6WBJ1B1
| Pin produk A1 | VDD — Power supply (1.2V) |
| Pin produk A2 | DQ0 — Data I/O bit 0 |
| Pin produk A3 | DQ1 — Data I/O bit 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data I/O bit 2 |
| Pin produk A6 | DQ3 — Data I/O bit 3 |
| Pin produk A7 | VDDQ — I/O power supply (1.2V) |
| Pin produk A8 | DQ4 — Data I/O bit 4 |
| Pin produk A9 | DQ5 — Data I/O bit 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data I/O bit 6 |
| Pin produk A12 | DQ7 — Data I/O bit 7 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQ8 — Data I/O bit 8 |
| Pin produk B3 | DQ9 — Data I/O bit 9 |
| Pin produk B4 | VDDQ — I/O power supply (1.2V) |
| Pin produk B5 | DQ10 — Data I/O bit 10 |
| Pin produk B6 | DQ11 — Data I/O bit 11 |
| Pin produk B7 | VSS — Ground |
| Pin produk B8 | DQ12 — Data I/O bit 12 |
| Pin produk B9 | DQ13 — Data I/O bit 13 |
| Pin produk B10 | VDDQ — I/O power supply (1.2V) |
| Pin produk B11 | DQ14 — Data I/O bit 14 |
| Pin produk B12 | DQ15 — Data I/O bit 15 |
| Pin produk C1 | VDD — Power supply (1.2V) |
| Pin produk C2 | A0 — Address input bit 0 |
| Pin produk C3 | A1 — Address input bit 1 |
| Pin produk C4 | A2 — Address input bit 2 |
| Pin produk C5 | A3 — Address input bit 3 |
| Pin produk C6 | A4 — Address input bit 4 |
| Pin produk C7 | A5 — Address input bit 5 |
| Pin produk C8 | A6 — Address input bit 6 |
| Pin produk C9 | A7 — Address input bit 7 |
| Pin produk C10 | A8 — Address input bit 8 |
| Pin produk C11 | A9 — Address input bit 9 |
| Pin produk C12 | VSS — Ground |
| Pin produk D1 | VSS — Ground |
| Pin produk D2 | A10/AP — Address input bit 10 / Auto-precharge |
| Pin produk D3 | A11 — Address input bit 11 |
| Pin produk D4 | A12/BC — Address input bit 12 / Burst chop |
| Pin produk D5 | A13 — Address input bit 13 |
| Pin produk D6 | A14 — Address input bit 14 |
| Pin produk D7 | A15 — Address input bit 15 |
| Pin produk D8 | BA0 — Bank address bit 0 |
| Pin produk D9 | BA1 — Bank address bit 1 |
| Pin produk D10 | BA2 — Bank address bit 2 |
| Pin produk D11 | BG0 — Bank group bit 0 |
| Pin produk D12 | BG1 — Bank group bit 1 |
| Pin produk E1 | VDDQ — I/O power supply (1.2V) |
| Pin produk E2 | CK_t — Clock input (true) |
| Pin produk E3 | CK_c — Clock input (complement) |
| Pin produk E4 | CKE — Clock enable |
| Pin produk E5 | CS_n — Chip select (active low) |
| Pin produk E6 | ODT — On-die termination control |
| Pin produk E7 | RAS_n/A16 — Row address strobe / Address bit 16 |
| Pin produk E8 | CAS_n/A15 — Column address strobe / Address bit 15 |
| Pin produk E9 | WE_n/A14 — Write enable / Address bit 14 |
| Pin produk E10 | RESET_n — Reset (active low) |
| Pin produk E11 | VDD — Power supply (1.2V) |
| Pin produk E12 | VSS — Ground |
| Pin produk F1 | VSS — Ground |
| Pin produk F2 | DM0 — Data mask for DQ0-7 |
| Pin produk F3 | DQS0_t — Data strobe 0 (true) |
| Pin produk F4 | DQS0_c — Data strobe 0 (complement) |
| Pin produk F5 | VDDQ — I/O power supply (1.2V) |
| Pin produk F6 | DM1 — Data mask for DQ8-15 |
| Pin produk F7 | DQS1_t — Data strobe 1 (true) |
| Pin produk F8 | DQS1_c — Data strobe 1 (complement) |
| Pin produk F9 | VSS — Ground |
| Pin produk F10 | TDQS_t — Termination data strobe (true) |
| Pin produk F11 | TDQS_c — Termination data strobe (complement) |
| Pin produk F12 | VDDQ — I/O power supply (1.2V) |
| Pin produk G1 | VDD — Power supply (1.2V) |
| Pin produk G2 | VSS — Ground |
| Pin produk G3 | VDDQ — I/O power supply (1.2V) |
| Pin produk G4 | VSS — Ground |
| Pin produk G5 | VDDQ — I/O power supply (1.2V) |
| Pin produk G6 | VSS — Ground |
| Pin produk G7 | VDDQ — I/O power supply (1.2V) |
| Pin produk G8 | VSS — Ground |
| Pin produk G9 | VDDQ — I/O power supply (1.2V) |
| Pin produk G10 | VSS — Ground |
| Pin produk G11 | VDDQ — I/O power supply (1.2V) |
| Pin produk G12 | VSS — Ground |
| Pin produk H1 | VSS — Ground |
| Pin produk H2 | VDD — Power supply (1.2V) |
| Pin produk H3 | VSS — Ground |
| Pin produk H4 | VDD — Power supply (1.2V) |
| Pin produk H5 | VSS — Ground |
| Pin produk H6 | VDD — Power supply (1.2V) |
| Pin produk H7 | VSS — Ground |
| Pin produk H8 | VDD — Power supply (1.2V) |
| Pin produk H9 | VSS — Ground |
| Pin produk H10 | VDD — Power supply (1.2V) |
| Pin produk H11 | VSS — Ground |
| Pin produk H12 | VDD — Power supply (1.2V) |
| Pin produk J1 | VDDQ — I/O power supply (1.2V) |
| Pin produk J2 | VSS — Ground |
| Pin produk J3 | VDDQ — I/O power supply (1.2V) |
| Pin produk J4 | VSS — Ground |
| Pin produk J5 | VDDQ — I/O power supply (1.2V) |
| Pin produk J6 | VSS — Ground |
| Pin produk J7 | VDDQ — I/O power supply (1.2V) |
| Pin produk J8 | VSS — Ground |
| Pin produk J9 | VDDQ — I/O power supply (1.2V) |
| Pin produk J10 | VSS — Ground |
| Pin produk J11 | VDDQ — I/O power supply (1.2V) |
| Pin produk J12 | VSS — Ground |
Aplikasi Umum
NT6AN8T6WBJ1B1 cocok untuk 6 aplikasis: Server Memory Modules, Networking Equipment, Industrial Automation, Embedded Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The NT6AN8T6WBJ1B1 is ideal for DDR4 UDIMM and RDIMM modules used in servers. Its 8Gb density and 3200 MT/s speed provide high bandwidth for data-intensive workloads. The 1.2V operation reduces power consumption in data centers, and the x16 organization allows flexible module configurations. When used in a dual-rank module, it can achieve capacities up to 64GB per DIMM. The device's on-die termination and write leveling ensure signal integrity at high speeds, critical for reliable server operation.
Direkomendasikan
Networking Equipment
In routers, switches, and network appliances, the NT6AN8T6WBJ1B1 provides fast packet buffering and routing table storage. Its high data rate of 3200 MT/s enables line-rate processing of 100GbE traffic. The low 1.2V supply is ideal for power-constrained networking hardware. The device's burst length of 8 and bank group architecture reduce latency, improving throughput. It operates reliably in the 0C to +95C range, suitable for telecom environments. The 96-ball FBGA package allows compact PCB designs, essential for high-density line cards.
Direkomendasikan
Industrial Automation
For industrial PCs and PLCs, the NT6AN8T6WBJ1B1 offers reliable memory for real-time control and data logging. Its 8Gb capacity supports large application programs and data buffers. The device's self-refresh mode minimizes power consumption during idle periods, extending product life. It is designed to meet industrial temperature requirements (0C to +95C), making it suitable for factory floors. The x16 interface simplifies PCB routing, reducing design complexity. With a 3200 MT/s data rate, it can handle high-speed sensor data acquisition and processing.
Direkomendasikan
Embedded Computing
In embedded systems like single-board computers and edge AI devices, the NT6AN8T6WBJ1B1 provides high-bandwidth memory for processing neural networks and computer vision. Its 8Gb density allows running complex models locally. The 1.2V supply is compatible with low-power embedded processors. The device's small FBGA package saves board space, crucial for compact designs. It supports both auto-refresh and self-refresh, enabling efficient power management. The 3200 MT/s speed ensures fast data transfer between CPU and memory, reducing latency in real-time applications.
Direkomendasikan
Consumer Electronics
For high-end consumer devices like gaming PCs and 4K TVs, the NT6AN8T6WBJ1B1 delivers the memory bandwidth needed for smooth graphics and multitasking. Its 8Gb capacity supports large game textures and streaming buffers. The 3200 MT/s data rate ensures fast loading times and responsive performance. The device's low power consumption is beneficial for energy-efficient designs. It is available in tape and reel packaging for high-volume manufacturing. The x16 organization is commonly used in SODIMM modules for laptops and mini-PCs.
Direkomendasikan
Automotive Infotainment
In automotive infotainment systems, the NT6AN8T6WBJ1B1 provides reliable memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports high-resolution maps and video playback. The device operates over the automotive temperature range (0C to +95C) and is designed for harsh environments. The 1.2V supply is compatible with automotive power rails. The x16 interface simplifies connection to automotive SoCs. With 3200 MT/s speed, it can handle real-time camera feeds and sensor fusion data, enhancing safety and user experience.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk NT6AN8T6WBJ1B1 — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | NT6AN8T0SA | K4A8G165WC-BCRC | MT40A512M16JY-075E | H5AN8G6NCJR-VKC | AS4C512M16D4A-62BCN | W634GU6RB09J |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Samsung Electronics | Micron Technology | SK Hynix | Alliance Memory | Winbond |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 1G x 8 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 22 | 22 | 22 | 22 | 22 | 22 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Diferensiator Kunci
- Cost-effective 8Gb DDR4-3200 x16 solution (vsK4A8G165WC-BCRC)
- Reliable supply chain from Nanya (vsMT40A512M16JY-075E)
- Pin-compatible with major brands (vsH5AN8G6NCJR-VKC)
Catatan Desain
For DDR4 routing, maintain 40-50 ohm single-ended impedance for DQ, DQS, and address/control lines. Use differential impedance of 80-100 ohms for CK and DQS pairs. Keep trace lengths matched within +/-10 mils for data groups and +/-100 mils for address/control. Place decoupling capacitors (0.1uF and 10uF) close to VDD and VDDQ pins, with a 0.1uF cap for each power pin. Follow JEDEC DDR4 layout guidelines for optimal signal integrity.
The NT6AN8T6WBJ1B1 requires a stable 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple (<50mV). The VREF (0.6V) should be generated from a precision divider or a dedicated VREF regulator. Ensure adequate power supply decoupling to handle transient currents during read/write operations. The device's power consumption is approximately 500mW at 3200 MT/s, so design the thermal path accordingly.
The NT6AN8T6WBJ1B1 has a maximum case temperature of +95C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance (theta_JA) of approximately 20C/W. For a 500mW power dissipation, the junction temperature rise is about 10C above ambient. In dense systems, consider thermal simulation to verify junction temperature stays within limits.
Informasi Konformitas
RoHS compliant per Nanya product page. Not AEC-Q100 qualified; for automotive, use industrial temperature variant if available.
