TJ60S06M3LT6L1.NQ vs TJ60S06M3L Perbandingan
Perbandingan bersamaan detil TJ60S06M3LT6L1.NQ dari Toshiba dan TJ60S06M3L dari Toshiba. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | TJ60S06M3LT6L1.NQ | TJ60S06M3L |
|---|---|---|
| Merek | Toshiba | Toshiba |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF (typ.) |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | DPAK+ (TO-252) | DPAK+ (TO-252-3 surface-mount) |
| Suhu Kerja | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | U-MOSVI (Trench MOSFET) |
| Level MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | — |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| On-State Resistance (RDS(on)) | — | 11.2 mΩ (typ.) at VGS = -10 V |
| Gate-Source Threshold Voltage (Vth) | — | -3.0 V (typ.) at VDS = -1 mA |
| Drain Leakage Current (IDSS) | — | -10 µA (max) at VDS = -40 V |
| Rentang Suhu Kerja | — | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] |
| Lead-Free / RoHS | — | RoHS compliant |
| Automotive Grade | — | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) |
| Manufacturer | — | Toshiba Electronic Devices & Storage |
| Cell Technology | — | Trench (enhancement mode) |