TJ60S06M3LT6L1.NQ vs TJ60S06M3L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng TJ60S06M3LT6L1.NQ sa pamamagitan ng Toshiba at TJ60S06M3L sa pamamagitan ng Toshiba. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ NakahandaPagsanggunian na paghahambing
| Parametro | TJ60S06M3LT6L1.NQ | TJ60S06M3L |
|---|---|---|
| Brand | Toshiba | Toshiba |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF (typ.) |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | DPAK+ (TO-252) | DPAK+ (TO-252-3 surface-mount) |
| Temperature na Operasyon | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | U-MOSVI (Trench MOSFET) |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | — |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| On-State Resistance (RDS(on)) | — | 11.2 mΩ (typ.) at VGS = -10 V |
| Gate-Source Threshold Voltage (Vth) | — | -3.0 V (typ.) at VDS = -1 mA |
| Drain Leakage Current (IDSS) | — | -10 µA (max) at VDS = -40 V |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] |
| Lead-Free / RoHS | — | RoHS compliant |
| Automotive Grade | — | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) |
| Manufacturer | — | Toshiba Electronic Devices & Storage |
| Cell Technology | — | Trench (enhancement mode) |