TJ60S06M3LT6L1.NQ vs TJ60S06M3L Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci TJ60S06M3LT6L1.NQ disebabkan oleh Toshiba dan TJ60S06M3L disebabkan oleh Toshiba. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Toshiba
TJ60S06M3L(T6L1,NQ - P-Ch -60V -60A 11.2mOhm DPAK+ MOSFET | Toshiba
TJ60S06M3LT6L1.NQ ✓ AktifPengandingan Spesifikasi
| Parametr | TJ60S06M3LT6L1.NQ | TJ60S06M3L |
|---|---|---|
| Merek | Toshiba | Toshiba |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-channel | P-Channel |
| Drain-Source Voltage (VDS) | -60 V | -60 V |
| Gate-Source Voltage (VGS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) at TC=25C | -60 A | — |
| Power Dissipation (PD) at TC=25C | 100 W | — |
| RDS(on) Max at VGS=-10V | 0.0112 ohm | — |
| Input Capacitance (Ciss) | 7760 pF | 7760 pF (typ.) |
| FET Type | MOSFET P-Channel, Metal Oxide | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | DPAK+ (TO-252) | DPAK+ (TO-252-3 surface-mount) |
| Suhu Operasi | -55C to +150C (Tj) | — |
| Technology | Toshiba U-MOS (silicon) | U-MOSVI (Trench MOSFET) |
| Aras MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | — |
| Automotive Qualified | Yes (per Toshiba product positioning) | — |
| Continuous Drain Current (ID) | — | -60 A (Tc) |
| Power Dissipation (PD) | — | 100 W (Tc) |
| On-State Resistance (RDS(on)) | — | 11.2 mΩ (typ.) at VGS = -10 V |
| Gate-Source Threshold Voltage (Vth) | — | -3.0 V (typ.) at VDS = -1 mA |
| Drain Leakage Current (IDSS) | — | -10 µA (max) at VDS = -40 V |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: -55C to +175C assumed, confirm via datasheet] |
| Lead-Free / RoHS | — | RoHS compliant |
| Automotive Grade | — | AEC-Q101 qualified (LJ suffix: TJ60S06M3L,LXHQ) |
| Manufacturer | — | Toshiba Electronic Devices & Storage |
| Cell Technology | — | Trench (enhancement mode) |