UCC21550AQDWKRQ1 vs UCC21550BDWR Perbandingan

Perbandingan bersamaan detil UCC21550AQDWKRQ1 dari Texas Instruments dan UCC21550BDWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum UCC21550AQDWKRQ1 UCC21550BDWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 —
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Technology Capacitive coupling —
Configuration Two low-side, two high-side, or half-bridge —
Dead Time Programmable via DT pin —
Disable Function Yes (DIS pin) Yes
Input Threshold Logic TTL and CMOS compatible —
Target Switch Types Power MOSFET, SiC, GaN, IGBT —
Qualification Automotive (Q1) —
Paket 14-SOIC (DWK) 16-SOIC (DW)
Part Marking 21550AQ —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Operating Temperature Range] —
Supply Voltage Range (VDD) [DATA_NEEDED: Supply Voltage Range] —
Konfigurasi Output — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Status RoHS — [DATA_NEEDED: RoHS status]

Spek dan Sumber

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