UCC21550AQDWKRQ1 vs UCC21550BDWR Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21550AQDWKRQ1 disebabkan oleh Texas Instruments dan UCC21550BDWR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktif

Pengandingan Spesifikasi

Parametr UCC21550AQDWKRQ1 UCC21550BDWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 —
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Technology Capacitive coupling —
Configuration Two low-side, two high-side, or half-bridge —
Dead Time Programmable via DT pin —
Disable Function Yes (DIS pin) Yes
Input Threshold Logic TTL and CMOS compatible —
Target Switch Types Power MOSFET, SiC, GaN, IGBT —
Qualification Automotive (Q1) —
Kemasan 14-SOIC (DWK) 16-SOIC (DW)
Part Marking 21550AQ —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Operating Temperature Range] —
Supply Voltage Range (VDD) [DATA_NEEDED: Supply Voltage Range] —
Konfigurasi Output — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Status RoHS — [DATA_NEEDED: RoHS status]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga