K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
N.º da peça: K4B4G1646E-BMMA ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $27.5625 | $27,56 |
| 10 | $19.9063 | $199,06 |
| 100 | $17.6094 | $1.760,94 |
| 500 | $16.8438 | $8.421,90 |
| 1.000 | $16.0781 | $16.078,10 |
K4B4G1646E-BMMA Visão geral
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design.
Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes.
Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternativas drop-in para K4B4G1646E-BMMA — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646E-BMMA (mesmo formato e footprint) — diferindo em Package, Supply Voltage, Data Rate, Operating Temperature, Memory Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646E-BYMA
✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →K4B4G1646E-BYK0
✓ Em estoque
$1.8 / unidade
Ver ficha técnica →K4B4G1646D-BMK0
✓ Em estoque
$5.9 / unidade
Ver ficha técnica →MT41K256M16HA-125:E
✓ Em estoque
$3.1 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA
✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →IS43TR16256AL-125KBL
✓ Em estoque
$5.6 / unidade
Ver ficha técnica →K4B4G1646E-BMMA Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gb |
| Organização da memória | 256M x 16 |
| Taxa de dados | 1600 Mbps |
| Tensão de alimentação | 1.35 V |
| Temperatura de operação | -40°C to +95°C |
| Encapsulamento | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| Interface | Parallel |
| Clock Frequency | 800 MHz |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do K4B4G1646E-BMMA
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply (1.35V) |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply (1.35V) |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply (1.35V) |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDD — Power supply (1.35V) |
| Pino C2 | A0 — Address input 0 |
| Pino C3 | A1 — Address input 1 |
| Pino C4 | A2 — Address input 2 |
| Pino C5 | A3 — Address input 3 |
| Pino C6 | A4 — Address input 4 |
| Pino C7 | A5 — Address input 5 |
| Pino C8 | A6 — Address input 6 |
| Pino C9 | A7 — Address input 7 |
| Pino C10 | A8 — Address input 8 |
| Pino C11 | A9 — Address input 9 |
| Pino C12 | VSS — Ground |
| Pino D1 | VSS — Ground |
| Pino D2 | A10/AP — Address input 10 / Auto precharge |
| Pino D3 | A11 — Address input 11 |
| Pino D4 | A12/BC — Address input 12 / Burst chop |
| Pino D5 | A13 — Address input 13 |
| Pino D6 | A14 — Address input 14 |
| Pino D7 | BA0 — Bank address 0 |
| Pino D8 | BA1 — Bank address 1 |
| Pino D9 | BA2 — Bank address 2 |
| Pino D10 | RAS# — Row address strobe |
| Pino D11 | CAS# — Column address strobe |
| Pino D12 | WE# — Write enable |
| Pino E1 | VDD — Power supply (1.35V) |
| Pino E2 | CS# — Chip select |
| Pino E3 | CKE — Clock enable |
| Pino E4 | ODT — On-die termination |
| Pino E5 | RESET# — Reset |
| Pino E6 | ZQ — ZQ calibration |
| Pino E7 | CK — Clock |
| Pino E8 | CK# — Complementary clock |
| Pino E9 | DM0 — Data mask 0 |
| Pino E10 | DM1 — Data mask 1 |
| Pino E11 | VSS — Ground |
| Pino E12 | VDD — Power supply (1.35V) |
| Pino F1 | VSS — Ground |
| Pino F2 | VDD — Power supply (1.35V) |
| Pino F3 | VSS — Ground |
| Pino F4 | VDD — Power supply (1.35V) |
| Pino F5 | VSS — Ground |
| Pino F6 | VDD — Power supply (1.35V) |
| Pino F7 | VSS — Ground |
| Pino F8 | VDD — Power supply (1.35V) |
| Pino F9 | VSS — Ground |
| Pino F10 | VDD — Power supply (1.35V) |
| Pino F11 | VSS — Ground |
| Pino F12 | VDD — Power supply (1.35V) |
Aplicações típicas
K4B4G1646E-BMMA é adequado para 6 aplicaçãos: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
Recomendado
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
Recomendado
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40°C to +95°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
Recomendado
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
Recomendado
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
Recomendado
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646E-BMMA — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | E: 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | E: Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | E: 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | E: 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Principais diferenciais
- Wide temperature range (-40°C to +95°C) (vs MT41K256M16HA-125:E)
- E-die process technology (vs K4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (vs IS43TR16256AL-125KBL)
Notas de projeto
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
Informações de conformidade
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
