K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646E-BMMA ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $27.5625 | $27.56 |
| 10 | $19.9063 | $199.06 |
| 100 | $17.6094 | $1,760.94 |
| 500 | $16.8438 | $8,421.90 |
| 1,000 | $16.0781 | $16,078.10 |
K4B4G1646E-BMMA نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design.
Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes.
Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
بدائل مباشرة لـ K4B4G1646E-BMMA — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4B4G1646E-BMMA (نفس عامل الشكل والبصمة) — يختلف في Package, Supply Voltage, Data Rate, Operating Temperature, Memory Type.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
K4B4G1646E-BYMA
✗ غير متوفر
$14.3182 / وحدة
عرض ورقة البيانات ←K4B4G1646E-BYK0
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646D-BMK0
تواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125:E
تواصل لمعرفة السعر
عرض ورقة البيانات ←H5TC4G63AFR-PBA
✗ غير متوفر
$3.9773 / وحدة
عرض ورقة البيانات ←IS43TR16256AL-125KBL
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BMMA الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gb |
| التنظيم | 256M x 16 |
| معدل البيانات | 1600 Mbps |
| جهد التغذية | 1.35 V |
| درجة حرارة التشغيل | -40°C to +95°C |
| العلبة | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| الواجهة | Parallel |
| Clock Frequency | 800 MHz |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
تكوين أطراف K4B4G1646E-BMMA
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDD — Power supply (1.35V) |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply (1.35V) |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDD — Power supply (1.35V) |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDD — Power supply (1.35V) |
| دبوس C2 | A0 — Address input 0 |
| دبوس C3 | A1 — Address input 1 |
| دبوس C4 | A2 — Address input 2 |
| دبوس C5 | A3 — Address input 3 |
| دبوس C6 | A4 — Address input 4 |
| دبوس C7 | A5 — Address input 5 |
| دبوس C8 | A6 — Address input 6 |
| دبوس C9 | A7 — Address input 7 |
| دبوس C10 | A8 — Address input 8 |
| دبوس C11 | A9 — Address input 9 |
| دبوس C12 | VSS — Ground |
| دبوس D1 | VSS — Ground |
| دبوس D2 | A10/AP — Address input 10 / Auto precharge |
| دبوس D3 | A11 — Address input 11 |
| دبوس D4 | A12/BC — Address input 12 / Burst chop |
| دبوس D5 | A13 — Address input 13 |
| دبوس D6 | A14 — Address input 14 |
| دبوس D7 | BA0 — Bank address 0 |
| دبوس D8 | BA1 — Bank address 1 |
| دبوس D9 | BA2 — Bank address 2 |
| دبوس D10 | RAS# — Row address strobe |
| دبوس D11 | CAS# — Column address strobe |
| دبوس D12 | WE# — Write enable |
| دبوس E1 | VDD — Power supply (1.35V) |
| دبوس E2 | CS# — Chip select |
| دبوس E3 | CKE — Clock enable |
| دبوس E4 | ODT — On-die termination |
| دبوس E5 | RESET# — Reset |
| دبوس E6 | ZQ — ZQ calibration |
| دبوس E7 | CK — Clock |
| دبوس E8 | CK# — Complementary clock |
| دبوس E9 | DM0 — Data mask 0 |
| دبوس E10 | DM1 — Data mask 1 |
| دبوس E11 | VSS — Ground |
| دبوس E12 | VDD — Power supply (1.35V) |
| دبوس F1 | VSS — Ground |
| دبوس F2 | VDD — Power supply (1.35V) |
| دبوس F3 | VSS — Ground |
| دبوس F4 | VDD — Power supply (1.35V) |
| دبوس F5 | VSS — Ground |
| دبوس F6 | VDD — Power supply (1.35V) |
| دبوس F7 | VSS — Ground |
| دبوس F8 | VDD — Power supply (1.35V) |
| دبوس F9 | VSS — Ground |
| دبوس F10 | VDD — Power supply (1.35V) |
| دبوس F11 | VSS — Ground |
| دبوس F12 | VDD — Power supply (1.35V) |
التطبيقات النموذجية
K4B4G1646E-BMMA مناسب لـ 6 التطبيقs: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
موصى به
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
موصى به
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40°C to +95°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
موصى به
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
موصى به
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
موصى به
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4B4G1646E-BMMA — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | E: 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | E: Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | E: 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | E: 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
أبرز الفروقات
- Wide temperature range (-40°C to +95°C) (مقابلMT41K256M16HA-125:E)
- E-die process technology (مقابلK4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (مقابلIS43TR16256AL-125KBL)
ملاحظات التصميم
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
معلومات الامتثال
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
