K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Référence : K4B4G1646E-BMMA ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $27.5625 | $27,56 |
| 10 | $19.9063 | $199,06 |
| 100 | $17.6094 | $1 760,94 |
| 500 | $16.8438 | $8 421,90 |
| 1 000 | $16.0781 | $16 078,10 |
K4B4G1646E-BMMA Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design.
Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes.
Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternatives de remplacement direct pour K4B4G1646E-BMMA — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646E-BMMA (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Data Rate, Operating Temperature, Memory Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYMA
✓ En stock
$14.3182 / unité
Voir la fiche technique →K4B4G1646E-BYK0
✓ En stock
$1.8 / unité
Voir la fiche technique →K4B4G1646D-BMK0
✓ En stock
$5.9 / unité
Voir la fiche technique →MT41K256M16HA-125:E
✓ En stock
$3.1 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✓ En stock
$3.9773 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✓ En stock
$5.6 / unité
Voir la fiche technique →K4B4G1646E-BMMA Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Débit de données | 1600 Mbps |
| Tension d'alimentation | 1.35 V |
| Température de fonctionnement | -40°C to +95°C |
| Boîtier | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| Interface | Parallel |
| Clock Frequency | 800 MHz |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de K4B4G1646E-BMMA
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.35V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply (1.35V) |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply (1.35V) |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply (1.35V) |
| Broche C2 | A0 — Address input 0 |
| Broche C3 | A1 — Address input 1 |
| Broche C4 | A2 — Address input 2 |
| Broche C5 | A3 — Address input 3 |
| Broche C6 | A4 — Address input 4 |
| Broche C7 | A5 — Address input 5 |
| Broche C8 | A6 — Address input 6 |
| Broche C9 | A7 — Address input 7 |
| Broche C10 | A8 — Address input 8 |
| Broche C11 | A9 — Address input 9 |
| Broche C12 | VSS — Ground |
| Broche D1 | VSS — Ground |
| Broche D2 | A10/AP — Address input 10 / Auto precharge |
| Broche D3 | A11 — Address input 11 |
| Broche D4 | A12/BC — Address input 12 / Burst chop |
| Broche D5 | A13 — Address input 13 |
| Broche D6 | A14 — Address input 14 |
| Broche D7 | BA0 — Bank address 0 |
| Broche D8 | BA1 — Bank address 1 |
| Broche D9 | BA2 — Bank address 2 |
| Broche D10 | RAS# — Row address strobe |
| Broche D11 | CAS# — Column address strobe |
| Broche D12 | WE# — Write enable |
| Broche E1 | VDD — Power supply (1.35V) |
| Broche E2 | CS# — Chip select |
| Broche E3 | CKE — Clock enable |
| Broche E4 | ODT — On-die termination |
| Broche E5 | RESET# — Reset |
| Broche E6 | ZQ — ZQ calibration |
| Broche E7 | CK — Clock |
| Broche E8 | CK# — Complementary clock |
| Broche E9 | DM0 — Data mask 0 |
| Broche E10 | DM1 — Data mask 1 |
| Broche E11 | VSS — Ground |
| Broche E12 | VDD — Power supply (1.35V) |
| Broche F1 | VSS — Ground |
| Broche F2 | VDD — Power supply (1.35V) |
| Broche F3 | VSS — Ground |
| Broche F4 | VDD — Power supply (1.35V) |
| Broche F5 | VSS — Ground |
| Broche F6 | VDD — Power supply (1.35V) |
| Broche F7 | VSS — Ground |
| Broche F8 | VDD — Power supply (1.35V) |
| Broche F9 | VSS — Ground |
| Broche F10 | VDD — Power supply (1.35V) |
| Broche F11 | VSS — Ground |
| Broche F12 | VDD — Power supply (1.35V) |
Applications typiques
K4B4G1646E-BMMA convient pour 6 applications: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
Recommandé
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
Recommandé
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40°C to +95°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
Recommandé
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
Recommandé
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
Recommandé
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646E-BMMA — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | E: 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | E: Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | E: 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | E: 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Principaux différenciateurs
- Wide temperature range (-40°C to +95°C) (vs MT41K256M16HA-125:E)
- E-die process technology (vs K4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (vs IS43TR16256AL-125KBL)
Notes de conception
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
Informations de conformité
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
