K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646E-BMMA ✓ Hoạt động| Số lượng | Giá đơn vị | Phụ |
|---|---|---|
| 1 | $27.5625 | $27,56 |
| 10 | $19.9063 | $199,06 |
| 100 | $17.6094 | $1.760,94 |
| 500 | $16.8438 | $8.421,90 |
| 1.000 | $16.0781 | $16.078,10 |
K4B4G1646E-BMMA Tóm tắt
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design.
Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes.
Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Bộ thay thế dễ dàng lắp đặt cho K4B4G1646E-BMMA — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với K4B4G1646E-BMMA (cùng hình factor và footprint) — khác nhau ở Package, Supply Voltage, Data Rate, Operating Temperature, Memory Type.
Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:
K4B4G1646E-BYMA
✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →K4B4G1646E-BYK0
Liên hệ để biết giá
Xem tài liệu →K4B4G1646D-BMK0
Liên hệ để biết giá
Xem tài liệu →MT41K256M16HA-125:E
Liên hệ để biết giá
Xem tài liệu →H5TC4G63AFR-PBA
✗ Hết hàng
$3.9773 / Đơn vị
Xem tài liệu →IS43TR16256AL-125KBL
Liên hệ để biết giá
Xem tài liệu →K4B4G1646E-BMMA Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Density | 4 Gb |
| Tổ chức | 256M x 16 |
| Tốc độ dữ liệu | 1600 Mbps |
| Điện áp cung cấp | 1.35 V |
| Nhiệt độ hoạt động | -40°C to +95°C |
| Hộp | 96-FBGA (9x13 mm) |
| Number of Banks | 8 |
| Giao diện | Parallel |
| Clock Frequency | 800 MHz |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes (Dynamic ODT) |
| ZQ Calibration | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân K4B4G1646E-BMMA
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply (1.35V) |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply (1.35V) |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDD — Power supply (1.35V) |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDD — Power supply (1.35V) |
| Chân C2 | A0 — Address input 0 |
| Chân C3 | A1 — Address input 1 |
| Chân C4 | A2 — Address input 2 |
| Chân C5 | A3 — Address input 3 |
| Chân C6 | A4 — Address input 4 |
| Chân C7 | A5 — Address input 5 |
| Chân C8 | A6 — Address input 6 |
| Chân C9 | A7 — Address input 7 |
| Chân C10 | A8 — Address input 8 |
| Chân C11 | A9 — Address input 9 |
| Chân C12 | VSS — Ground |
| Chân D1 | VSS — Ground |
| Chân D2 | A10/AP — Address input 10 / Auto precharge |
| Chân D3 | A11 — Address input 11 |
| Chân D4 | A12/BC — Address input 12 / Burst chop |
| Chân D5 | A13 — Address input 13 |
| Chân D6 | A14 — Address input 14 |
| Chân D7 | BA0 — Bank address 0 |
| Chân D8 | BA1 — Bank address 1 |
| Chân D9 | BA2 — Bank address 2 |
| Chân D10 | RAS# — Row address strobe |
| Chân D11 | CAS# — Column address strobe |
| Chân D12 | WE# — Write enable |
| Chân E1 | VDD — Power supply (1.35V) |
| Chân E2 | CS# — Chip select |
| Chân E3 | CKE — Clock enable |
| Chân E4 | ODT — On-die termination |
| Chân E5 | RESET# — Reset |
| Chân E6 | ZQ — ZQ calibration |
| Chân E7 | CK — Clock |
| Chân E8 | CK# — Complementary clock |
| Chân E9 | DM0 — Data mask 0 |
| Chân E10 | DM1 — Data mask 1 |
| Chân E11 | VSS — Ground |
| Chân E12 | VDD — Power supply (1.35V) |
| Chân F1 | VSS — Ground |
| Chân F2 | VDD — Power supply (1.35V) |
| Chân F3 | VSS — Ground |
| Chân F4 | VDD — Power supply (1.35V) |
| Chân F5 | VSS — Ground |
| Chân F6 | VDD — Power supply (1.35V) |
| Chân F7 | VSS — Ground |
| Chân F8 | VDD — Power supply (1.35V) |
| Chân F9 | VSS — Ground |
| Chân F10 | VDD — Power supply (1.35V) |
| Chân F11 | VSS — Ground |
| Chân F12 | VDD — Power supply (1.35V) |
Ứng dụng tiêu biểu
K4B4G1646E-BMMA phù hợp cho 6 Áp dụngs: Industrial Automation, Networking Equipment, Automotive Infotainment, Medical Imaging, High-Performance Computing, Consumer Electronics.
Industrial Automation
The K4B4G1646E-BMMA's wide temperature range (-40°C to +95°C) and low voltage (1.35V) make it ideal for industrial controllers and PLCs that operate in harsh environments. Its 1600 Mbps data rate ensures fast data processing for real-time control loops. The 4Gb density provides ample memory for complex automation algorithms and data logging. With features like auto precharge and ZQ calibration, it maintains signal integrity in noisy industrial settings, reducing system errors and improving reliability.
Được đề xuất
Networking Equipment
In routers and switches, the K4B4G1646E-BMMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1600 Mbps data rate and 16-bit interface enable fast data throughput, while the 1.35V operation reduces power consumption in always-on network devices. The 96-FBGA package allows compact board designs, and features like dynamic ODT improve signal integrity at high speeds, ensuring reliable data transmission in demanding network environments.
Được đề xuất
Automotive Infotainment
The K4B4G1646E-BMMA is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its -40°C to +95°C temperature range meets automotive requirements, and the 1.35V low voltage helps reduce power consumption in vehicles. The 4Gb density supports large maps and media files, while the 1600 Mbps data rate ensures smooth performance. Features like auto precharge and ZQ calibration enhance reliability in the automotive environment.
Được đề xuất
Medical Imaging
In medical imaging devices such as ultrasound and MRI systems, the K4B4G1646E-BMMA provides high-speed memory for image processing and storage. Its 1600 Mbps data rate enables fast data transfer, while the 4Gb density can hold large image frames. The wide temperature range ensures reliable operation in clinical environments. The low voltage operation reduces heat generation, which is critical in sensitive medical equipment. Features like dynamic ODT help maintain signal integrity in high-speed imaging data paths.
Được đề xuất
High-Performance Computing
The K4B4G1646E-BMMA is used in servers and workstations for high-speed data processing. Its 1600 Mbps data rate and 16-bit interface provide high bandwidth for compute-intensive tasks. The 1.35V operation reduces power consumption in data centers, contributing to energy efficiency. The 96-FBGA package allows high-density memory modules, and features like auto precharge and ZQ calibration ensure reliable operation at high speeds. This memory is ideal for applications requiring large memory capacity and fast access times.
Được đề xuất
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the K4B4G1646E-BMMA provides high-speed memory for multimedia processing and app execution. Its 1600 Mbps data rate ensures smooth video playback and responsive user interfaces. The 1.35V low voltage helps extend battery life in portable devices. The 4Gb density supports multiple applications and media content. Features like dynamic ODT improve signal integrity in compact designs, making it suitable for space-constrained consumer electronics.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4B4G1646E-BMMA — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | E: 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Samsung | Samsung | E: Micron | SK Hynix | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | E: 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | E: 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | E: 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | E: 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | -40°C to +95°C | -40°C to +95°C |
Bảo phân biệt quan trọng
- Wide temperature range (-40°C to +95°C) (vsMT41K256M16HA-125:E)
- E-die process technology (vsK4B4G1646D-BMK0)
- High-speed 1600 Mbps operation (vsIS43TR16256AL-125KBL)
Ghi chú thiết kế
For high-speed DDR3L designs, maintain controlled impedance of 40-60 ohms for data and address lines. Use a 4-layer or more PCB with solid ground plane. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Samsung datasheet to minimize signal integrity issues.
The K4B4G1646E-BMMA operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Calculate junction temperature to ensure it stays within the maximum rating. For industrial applications, consider derating if ambient temperature exceeds 85°C.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high for normal operation. Verify that the CKE pin is properly controlled during power-up and power-down sequences to avoid data corruption. Also, ensure the supply voltage is within 1.283V to 1.45V as per DDR3L specifications.
Thông tin tuân thủ
RoHS compliant per LCSC listing. Lead-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
