MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MPN: MT40A512M16LY-075:E ✓ Hoạt độngMT40A512M16LY-075:E Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V vs 1.5V for DDR3), reducing power dissipation and enabling higher density modules.
Key features include on-die, internal, adjustable VREFDQ generation for improved signal integrity, 1.2V pseudo open-drain I/O for compatibility with modern controllers, and a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (DTC), CRC function, and data mask function, ensuring reliable operation in high-speed systems.
The MT40A512M16LY-075:E is designed for high-bandwidth applications such as enterprise servers, networking equipment, and high-performance computing. Its 16-bit data bus and 8Gb density make it suitable for memory modules (DIMMs) and embedded systems requiring large memory capacity. The device is compliant with JEDEC DDR4 standards and is RoHS compliant.
When designing with this component, ensure proper decoupling of VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the pins. The VPP supply must be clean and within 2.5V ±250mV. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
Bộ thay thế dễ dàng lắp đặt cho MT40A512M16LY-075:E — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT40A512M16LY-075:E (cùng hình factor và footprint) — khác nhau ở Package, Data Rate, Memory Size, Clock Frequency, Features.
MT40A512M16JY-075E
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MT40A512M16LY-062E
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MT40A512M16TB-062E
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →K4A8G165WB-BCWE
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →MT40A512M16LY-075:E Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Kích thước bộ nhớ | 8 Gbit (512M x 16) |
| Tốc độ dữ liệu | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| Latency CAS | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Giao diện | Parallel |
| Hộp | 96-FBGA (7.5x13.5mm) |
| Khoảng nhiệt độ hoạt động | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| Kiểu lắp đặt | Surface Mount |
Cấu hình chân MT40A512M16LY-075:E
| Chân A1 | VDD — Power supply (1.2V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | VSS — Ground |
| Chân B1 | DQ1 — Data input/output 1 |
| Chân B2 | VDDQ — I/O power supply (1.2V) |
| Chân B3 | DQ2 — Data input/output 2 |
| Chân C1 | DQ3 — Data input/output 3 |
| Chân C2 | VSSQ — I/O ground |
| Chân C3 | DQ4 — Data input/output 4 |
| Chân D1 | DQ5 — Data input/output 5 |
| Chân D2 | VDD — Power supply (1.2V) |
| Chân D3 | DQ6 — Data input/output 6 |
| Chân E1 | DQ7 — Data input/output 7 |
| Chân E2 | VSS — Ground |
| Chân E3 | DQS0 — Data strobe 0 |
| Chân F1 | DQS0# — Data strobe 0 complement |
| Chân F2 | VDDQ — I/O power supply (1.2V) |
| Chân F3 | DM0 — Data mask 0 |
| Chân G1 | A0 — Address input 0 |
| Chân G2 | A1 — Address input 1 |
| Chân G3 | A2 — Address input 2 |
| Chân H1 | A3 — Address input 3 |
| Chân H2 | A4 — Address input 4 |
| Chân H3 | A5 — Address input 5 |
| Chân J1 | A6 — Address input 6 |
| Chân J2 | A7 — Address input 7 |
| Chân J3 | A8 — Address input 8 |
| Chân K1 | A9 — Address input 9 |
| Chân K2 | A10/AP — Address input 10 / Auto-precharge |
| Chân K3 | A11 — Address input 11 |
| Chân L1 | A12 — Address input 12 |
| Chân L2 | A13 — Address input 13 |
| Chân L3 | A14 — Address input 14 |
| Chân M1 | A15 — Address input 15 |
| Chân M2 | BA0 — Bank address 0 |
| Chân M3 | BA1 — Bank address 1 |
| Chân N1 | BA2 — Bank address 2 |
| Chân N2 | BG0 — Bank group 0 |
| Chân N3 | BG1 — Bank group 1 |
| Chân P1 | CK — Clock input |
| Chân P2 | CK# — Clock input complement |
| Chân P3 | CKE — Clock enable |
| Chân R1 | CS# — Chip select |
| Chân R2 | ODT — On-die termination |
| Chân R3 | RAS# — Row address strobe |
| Chân T1 | CAS# — Column address strobe |
| Chân T2 | WE# — Write enable |
| Chân T3 | RESET# — Reset |
| Chân U1 | VPP — Wordline boost supply (2.5V) |
| Chân U2 | VDD — Power supply (1.2V) |
| Chân U3 | VSS — Ground |
Ứng dụng tiêu biểu
MT40A512M16LY-075:E phù hợp cho 6 Áp dụngs: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
Được đề xuất
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
Được đề xuất
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
Được đề xuất
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
Được đề xuất
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
Được đề xuất
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT40A512M16LY-075:E — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
Bảo phân biệt quan trọng
- Active lifecycle status (vsMT40A512M16LY-062E)
- Lower speed grade for cost optimization (vsAS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility (vsK4A8G165WB-BCWE)
Ghi chú thiết kế
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
Thông tin tuân thủ
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
