MT40A512M16LY-075:E vs K4A8G165WB-BCWE Perbandingan
Perbandingan bersamaan detil MT40A512M16LY-075:E dari Micron Technology dan K4A8G165WB-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ AktifSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT40A512M16LY-075:E | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6,25 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit (512M x 16) | 8 Gb |
| Laju Data | 2666 MT/s | 3200 Mbps/pin |
| Clock Frequency | 1.33 GHz | — |
| Latensi CAS | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Antarmuka | Parallel | Parallel |
| Paket | 96-FBGA (7.5x13.5mm) | 96FBGA |
| Rentang Suhu Kerja | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Organization | — | 512M x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Access Time | — | 19 ns |
| Suhu Kerja | — | 0C to +85C |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |