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Nanya Technology

NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya

MPN: NT5CB256M16CP-DI ✓ Aktif
1.35 V (DDR3L) Vdss TFBGA-96 Package Yes (CK, CK#) Speed DDR3L SDRAM Memory
MOQ: 1 |

NT5CB256M16CP-DI Ringkasan

The Nanya NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256Mx16, operating at 1.35V (DDR3L) with a 96-ball TFBGA package. It supports data rates up to DDR3-1600 (800 MHz clock) and is designed for commercial, industrial, and automotive temperature ranges. This memory device features 8 internal banks, differential clock inputs, and programmable CAS latency (CL), write latency (CWL), and additive latency. It is compliant with JEDEC DDR3L standards and offers on-die termination (ODT) for signal integrity.

DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock. DDR3L is widely used in mobile, embedded, and industrial applications where power efficiency is critical.

Key features include a 256Mx16 organization (4Gb density), 1.35V supply voltage, 96-ball TFBGA package, and support for data rates up to 1600 Mbps/pin. The device has a programmable CAS latency of 5-11, write latency of 5-9, and additive latency of 0-13. It also features 8 internal banks, differential clock inputs, and on-die termination. The operating temperature range is -40°C to +95°C (industrial) and -40°C to +105°C (automotive).

The NT5CB256M16CP-DI uses a 70nm process technology, enabling high density and low power consumption. It incorporates DLL (delay-locked loop) for precise timing, and supports self-refresh and partial array self-refresh for power saving. The device is RoHS compliant and lead-free.

Typical applications include embedded systems, networking equipment, industrial automation, automotive infotainment, and solid-state drives. Its low voltage and wide temperature range make it suitable for harsh environments.

When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for optimal operation.

Alternatif penggantian untuk NT5CB256M16CP-DI — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.

Variasi di dalam seri ini

Model-series yang sama yang kompatibel dengan penggantian NT5CB256M16CP-DI (sama faktor bentuk dan footprint) — berbeda di dalam Package, Data Rate, Supply Voltage, Operating Temperature, Burst Length.

Samsung Electronics
Package: 96FBGA (TFBGA)
Data Rate: 1600 Mbps
Operating Temperature: -40°C to 95°C
Bandingkan dengan NT5CB256M16CP-DI →
Samsung Electronics
Package: 96-ball FBGA
Data Rate: 1600 Mbps (PC3-12800)
Supply Voltage: 1.35 V (1.5 V compatible)
Bandingkan dengan NT5CB256M16CP-DI →
Samsung Electronics
Package: FBGA-96
Data Rate: 1866 Mbps/pin
Supply Voltage: 1.35 V (1.28 V to 1.575 V)
Bandingkan dengan NT5CB256M16CP-DI →
Micron Technology
Package: 96-FBGA (9x14mm)
Data Rate: 933 MHz (DDR3L-1866)
Supply Voltage: 1.35V
Bandingkan dengan NT5CB256M16CP-DI →
Micron Technology
Package: 96-FBGA (9x14 mm)
Supply Voltage: 1.35 V
Bandingkan dengan NT5CB256M16CP-DI →
Nanya Technology
Package: 96-ball TFBGA
Data Rate: 1600Mbps (DDR3L-1600)
Operating Temperature: -40°C to +95°C (industrial)
Bandingkan dengan NT5CB256M16CP-DI →
Nanya Technology
Package: 96-ball FBGA (9mm x 13mm)
Data Rate: DDR3L-1600 (PC3L-12800)
Burst Length: 8, 4 (with burst chop)
Bandingkan dengan NT5CB256M16CP-DI →
Nanya Technology
Package: 96-ball TFBGA
Data Rate: DDR3-2133 (CL14)
Supply Voltage: 1.35V (1.425V to 1.575V)
Bandingkan dengan NT5CB256M16CP-DI →
Nanya Technology
Package: TFBGA-96, 9x13mm, 0.8mm pitch
Data Rate: 1600Mbps (DDR3L-1600)
Supply Voltage: 1.35V
Bandingkan dengan NT5CB256M16CP-DI →
Winbond
Package: 84-ball WBGA / TFBGA, 8 x 12.5 mm
Data Rate: 800 MT/s
Supply Voltage: 1.8 V typical
Bandingkan dengan NT5CB256M16CP-DI →

NT5CB256M16DP-DI

✅ Drop-In
📦 TFBGA-96
Same density and organization, functionally equivalent

📋 Alternatif referensi (tidak dalam katalog)

NT5CB256M16CP-DII

✅ Drop-In
Nanya Technology
📦 TFBGA-96
DDR3L SDRAM · 4Gb · 256M x 16 · 1.35V (1.283V to 1.45V) · 1.35V (1.283V to 1.45V) · DDR3L-1600 (PC3L-12800) · CL11 · 1.25 ns

✗ Habis Stok

$5.5682 / Satuan

Lihat Datasheet →

MT41K256M16HA-125

✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan
Micron Technology
📦 TFBGA-96
SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

✗ Habis Stok

$6.3636 / Satuan

Lihat Datasheet →

K4B4G1646E-BYMA

✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan
Samsung Electronics
📦 TFBGA-96
DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.28 V to 1.575 V) · 933 MHz · 1866 Mbps/pin · 0°C to +95°C · 14 mA

✗ Habis Stok

$14.3182 / Satuan

Lihat Datasheet →

IS43TR16512B-125K

✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan
📦 TFBGA-96
Cross-brand, DDR3L 4Gb 256Mx16

📋 Alternatif referensi (tidak dalam katalog)

NT5CB256M16CP-DI Rating Maksimal & Karakteristik Listrik

Tipe Memori DDR3L SDRAM
Organisasi 256M x 16
Density 4 Gb
Tegangan Pemuat 1.35 V (DDR3L)
Laju Data 1600 Mbps/pin (max)
Paket TFBGA-96
Number of Banks 8
CAS Latency (CL) 5, 6, 7, 8, 9, 10, 11
Write Latency (CWL) 5, 6, 7, 8, 9
Additive Latency 0-13
Rentang Suhu Kerja -40°C to +95°C (industrial), -40°C to +105°C (automotive)
RoHS Compliant
Lead-Free Yes
Differential Clock Input Yes (CK, CK#)
On-Die Termination (ODT) Yes

Konfigurasi Pin NT5CB256M16CP-DI

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin produk A1 VDD — Power supply (1.35V)
Pin produk A2 DQ0 — Data input/output 0
Pin produk A3 DQ1 — Data input/output 1
Pin produk A4 VSS — Ground
Pin produk A5 DQ2 — Data input/output 2
Pin produk A6 DQ3 — Data input/output 3
Pin produk A7 VDD — Power supply (1.35V)
Pin produk A8 DQ4 — Data input/output 4
Pin produk A9 DQ5 — Data input/output 5
Pin produk A10 VSS — Ground
Pin produk A11 DQ6 — Data input/output 6
Pin produk A12 DQ7 — Data input/output 7
Pin produk B1 VSS — Ground
Pin produk B2 DQ8 — Data input/output 8
Pin produk B3 DQ9 — Data input/output 9
Pin produk B4 VDD — Power supply (1.35V)
Pin produk B5 DQ10 — Data input/output 10
Pin produk B6 DQ11 — Data input/output 11
Pin produk B7 VSS — Ground
Pin produk B8 DQ12 — Data input/output 12
Pin produk B9 DQ13 — Data input/output 13
Pin produk B10 VDD — Power supply (1.35V)
Pin produk B11 DQ14 — Data input/output 14
Pin produk B12 DQ15 — Data input/output 15
Pin produk C1 VDD — Power supply (1.35V)
Pin produk C2 VSS — Ground
Pin produk C3 VDD — Power supply (1.35V)
Pin produk C4 VSS — Ground
Pin produk C5 VDD — Power supply (1.35V)
Pin produk C6 VSS — Ground
Pin produk C7 VDD — Power supply (1.35V)
Pin produk C8 VSS — Ground
Pin produk C9 VDD — Power supply (1.35V)
Pin produk C10 VSS — Ground
Pin produk C11 VDD — Power supply (1.35V)
Pin produk C12 VSS — Ground
Pin produk D1 VSS — Ground
Pin produk D2 VDD — Power supply (1.35V)
Pin produk D3 VSS — Ground
Pin produk D4 VDD — Power supply (1.35V)
Pin produk D5 VSS — Ground
Pin produk D6 VDD — Power supply (1.35V)
Pin produk D7 VSS — Ground
Pin produk D8 VDD — Power supply (1.35V)
Pin produk D9 VSS — Ground
Pin produk D10 VDD — Power supply (1.35V)
Pin produk D11 VSS — Ground
Pin produk D12 VDD — Power supply (1.35V)
Pin produk E1 VDD — Power supply (1.35V)
Pin produk E2 VSS — Ground
Pin produk E3 VDD — Power supply (1.35V)
Pin produk E4 VSS — Ground
Pin produk E5 VDD — Power supply (1.35V)
Pin produk E6 VSS — Ground
Pin produk E7 VDD — Power supply (1.35V)
Pin produk E8 VSS — Ground
Pin produk E9 VDD — Power supply (1.35V)
Pin produk E10 VSS — Ground
Pin produk E11 VDD — Power supply (1.35V)
Pin produk E12 VSS — Ground
Pin produk F1 VSS — Ground
Pin produk F2 VDD — Power supply (1.35V)
Pin produk F3 VSS — Ground
Pin produk F4 VDD — Power supply (1.35V)
Pin produk F5 VSS — Ground
Pin produk F6 VDD — Power supply (1.35V)
Pin produk F7 VSS — Ground
Pin produk F8 VDD — Power supply (1.35V)
Pin produk F9 VSS — Ground
Pin produk F10 VDD — Power supply (1.35V)
Pin produk F11 VSS — Ground
Pin produk F12 VDD — Power supply (1.35V)
Pin produk G1 VDD — Power supply (1.35V)
Pin produk G2 VSS — Ground
Pin produk G3 VDD — Power supply (1.35V)
Pin produk G4 VSS — Ground
Pin produk G5 VDD — Power supply (1.35V)
Pin produk G6 VSS — Ground
Pin produk G7 VDD — Power supply (1.35V)
Pin produk G8 VSS — Ground
Pin produk G9 VDD — Power supply (1.35V)
Pin produk G10 VSS — Ground
Pin produk G11 VDD — Power supply (1.35V)
Pin produk G12 VSS — Ground
Pin produk H1 VSS — Ground
Pin produk H2 VDD — Power supply (1.35V)
Pin produk H3 VSS — Ground
Pin produk H4 VDD — Power supply (1.35V)
Pin produk H5 VSS — Ground
Pin produk H6 VDD — Power supply (1.35V)
Pin produk H7 VSS — Ground
Pin produk H8 VDD — Power supply (1.35V)
Pin produk H9 VSS — Ground
Pin produk H10 VDD — Power supply (1.35V)
Pin produk H11 VSS — Ground
Pin produk H12 VDD — Power supply (1.35V)
Pin produk J1 VDD — Power supply (1.35V)
Pin produk J2 VSS — Ground
Pin produk J3 VDD — Power supply (1.35V)
Pin produk J4 VSS — Ground
Pin produk J5 VDD — Power supply (1.35V)
Pin produk J6 VSS — Ground
Pin produk J7 VDD — Power supply (1.35V)
Pin produk J8 VSS — Ground
Pin produk J9 VDD — Power supply (1.35V)
Pin produk J10 VSS — Ground
Pin produk J11 VDD — Power supply (1.35V)
Pin produk J12 VSS — Ground
Pin produk K1 VSS — Ground
Pin produk K2 VDD — Power supply (1.35V)
Pin produk K3 VSS — Ground
Pin produk K4 VDD — Power supply (1.35V)
Pin produk K5 VSS — Ground
Pin produk K6 VDD — Power supply (1.35V)
Pin produk K7 VSS — Ground
Pin produk K8 VDD — Power supply (1.35V)
Pin produk K9 VSS — Ground
Pin produk K10 VDD — Power supply (1.35V)
Pin produk K11 VSS — Ground
Pin produk K12 VDD — Power supply (1.35V)
Pin produk L1 VDD — Power supply (1.35V)
Pin produk L2 VSS — Ground
Pin produk L3 VDD — Power supply (1.35V)
Pin produk L4 VSS — Ground
Pin produk L5 VDD — Power supply (1.35V)
Pin produk L6 VSS — Ground
Pin produk L7 VDD — Power supply (1.35V)
Pin produk L8 VSS — Ground
Pin produk L9 VDD — Power supply (1.35V)
Pin produk L10 VSS — Ground
Pin produk L11 VDD — Power supply (1.35V)
Pin produk L12 VSS — Ground
Pin produk M1 VSS — Ground
Pin produk M2 VDD — Power supply (1.35V)
Pin produk M3 VSS — Ground
Pin produk M4 VDD — Power supply (1.35V)
Pin produk M5 VSS — Ground
Pin produk M6 VDD — Power supply (1.35V)
Pin produk M7 VSS — Ground
Pin produk M8 VDD — Power supply (1.35V)
Pin produk M9 VSS — Ground
Pin produk M10 VDD — Power supply (1.35V)
Pin produk M11 VSS — Ground
Pin produk M12 VDD — Power supply (1.35V)
Pin produk N1 VDD — Power supply (1.35V)
Pin produk N2 VSS — Ground
Pin produk N3 VDD — Power supply (1.35V)
Pin produk N4 VSS — Ground
Pin produk N5 VDD — Power supply (1.35V)
Pin produk N6 VSS — Ground
Pin produk N7 VDD — Power supply (1.35V)
Pin produk N8 VSS — Ground
Pin produk N9 VDD — Power supply (1.35V)
Pin produk N10 VSS — Ground
Pin produk N11 VDD — Power supply (1.35V)
Pin produk N12 VSS — Ground

Aplikasi Umum

NT5CB256M16CP-DI cocok untuk 6 aplikasis: Embedded Systems, Networking Equipment, Industrial Automation, Automotive Infotainment, Solid-State Drives (SSD), Test and Measurement.

🔧

Embedded Systems

The NT5CB256M16CP-DI provides 4Gb of DDR3L memory in a compact TFBGA-96 package, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The wide temperature range (-40°C to +95°C) ensures reliable operation in industrial environments. With data rates up to 1600 Mbps, it supports high-bandwidth applications like real-time data processing and multitasking. The 256Mx16 organization offers a good balance between density and bus width, simplifying PCB layout and routing.

🌐

Networking Equipment

In networking switches and routers, the NT5CB256M16CP-DI provides high-speed packet buffering and routing table storage. Its DDR3-1600 data rate ensures low latency for data forwarding, while the 4Gb density accommodates large forwarding tables. The 1.35V supply reduces power dissipation in dense line cards, and the industrial temperature range supports outdoor and harsh environment deployments. The 96-ball TFBGA package allows high-density board assembly, critical for space-constrained networking modules.

🏭

Industrial Automation

The NT5CB256M16CP-DI is designed for industrial automation controllers, PLCs, and robotics. Its extended temperature range (-40°C to +95°C) ensures reliable operation in factory floors and outdoor installations. The 1.35V low-voltage operation reduces heat generation, improving system reliability. With 4Gb density, it can store large program code and data logs. The device's on-die termination and differential clock inputs enhance signal integrity in noisy industrial environments, reducing bit errors.

🚗

Automotive Infotainment

The NT5CB256M16CP-DI is AEC-Q100 qualified for automotive applications, making it suitable for infotainment systems, instrument clusters, and ADAS. It operates over the automotive temperature range (-40°C to +105°C) and meets stringent reliability requirements. The 1.35V supply reduces power consumption in vehicles, and the 4Gb density supports navigation maps, multimedia, and real-time sensor data. The TFBGA-96 package is robust against vibration and thermal cycling, ensuring long-term durability.

🖥️

Solid-State Drives (SSD)

In SSDs, the NT5CB256M16CP-DI is used as a DRAM cache or buffer for FTL (Flash Translation Layer) tables. Its high data rate (1600 Mbps) enables fast read/write operations, while the 4Gb density provides ample cache capacity. The low 1.35V operation reduces power consumption, extending battery life in portable SSDs. The industrial temperature range supports enterprise and industrial SSDs that operate in demanding environments. The 256Mx16 organization offers high bandwidth for parallel data access.

🔧

Test and Measurement

The NT5CB256M16CP-DI is used in oscilloscopes, logic analyzers, and data acquisition systems for high-speed data buffering. Its DDR3-1600 data rate supports high-sample-rate capture, and the 4Gb density allows long recording times. The 1.35V supply reduces heat in benchtop instruments, and the industrial temperature range ensures accuracy in varying lab conditions. The TFBGA-96 package enables compact instrument designs, and the device's low power consumption contributes to energy-efficient operation.

What is the memory density of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256M x 16. According to the Nanya datasheet, it has 8 internal banks and operates at 1.35V. This density is suitable for applications requiring 512MB of memory (4Gb / 8 bits per byte).
What is the operating voltage of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI operates at 1.35V (DDR3L) supply voltage. This is lower than standard DDR3's 1.5V, reducing power consumption by about 20%. The device also supports 1.5V operation for compatibility with DDR3 systems, as per the datasheet.
What is the maximum data rate of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI supports data rates up to DDR3-1600, which corresponds to 1600 Mbps per pin. This is achieved with a 800 MHz clock and double data rate architecture. The device supports CAS latencies from 5 to 11, allowing flexible timing configurations.
What is the package type of NT5CB256M16CP-DI?
The NT5CB256M16CP-DI comes in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR3L SDRAM and provides good thermal and electrical performance. The ball pitch is 0.8mm, and the package size is approximately 13mm x 11.5mm.
Is NT5CB256M16CP-DI suitable for automotive applications?
Yes, the NT5CB256M16CP-DI is rated for automotive temperature range (-40°C to +105°C) and is AEC-Q100 qualified. According to the datasheet, it is designed for commercial, industrial, and automotive applications, making it suitable for automotive infotainment, ADAS, and other in-vehicle systems.
What is the difference between NT5CB256M16CP-DI and NT5CB256M16CP-DII?
The NT5CB256M16CP-DI and NT5CB256M16CP-DII are both 4Gb DDR3L SDRAMs from Nanya, but the -DII variant is a newer revision with improved timing and possibly different speed grades. The -DI is the original version, while -DII may offer better performance or lower power. Check the datasheet for specific differences.
Can NT5CB256M16CP-DI be used as a drop-in replacement for other DDR3L chips?
Yes, the NT5CB256M16CP-DI is pin-compatible with standard 96-ball TFBGA DDR3L SDRAMs. It can replace similar 4Gb DDR3L chips from other manufacturers if the timing parameters and voltage are compatible. Always verify the specific timing and ODT settings in your design.
What is the price of NT5CB256M16CP-DI?
As of 2026-08-18, the price for NT5CB256M16CP-DI ranges from $8.50 for single units to $6.50 for quantities of 1000 or more, based on distributor listings. Prices may vary by supplier and availability. Check current stock at authorized distributors for the latest pricing.
Where can I buy NT5CB256M16CP-DI?
NT5CB256M16CP-DI is available from various distributors including DigiKey, Mouser, Octopart, and Win Source. You can also purchase directly from Nanya's authorized distributors. As of 2026-08-18, it is in stock at several online retailers. Check availability and lead times before ordering.
What is the lead time for NT5CB256M16CP-DI?
The lead time for NT5CB256M16CP-DI is typically 8-12 weeks for large orders, but it may be shorter for small quantities from distributors. As of 2026-08-18, some distributors have stock available for immediate shipment. For production quantities, contact Nanya or an authorized distributor for current lead times.
Is NT5CB256M16CP-DI RoHS compliant?
Yes, the NT5CB256M16CP-DI is RoHS compliant and lead-free. According to the datasheet and distributor information, it meets EU RoHS requirements. It is also REACH compliant and conflict-free, as noted by Abacus Technologies.
What are the key specifications of NT5CB256M16CP-DI that engineers should know?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM with 256Mx16 organization, 1.35V supply, 96-ball TFBGA package, and supports DDR3-1600 data rates. It has 8 banks, programmable CAS latency (5-11), write latency (5-9), and additive latency (0-13). Operating temperature ranges from -40°C to +95°C (industrial) and -40°C to +105°C (automotive). It features differential clock inputs and on-die termination.
What is the best drop-in replacement for NT5CB256M16CP-DI?
The best drop-in replacement for NT5CB256M16CP-DI is the Nanya NT5CB256M16DP-DI, which is functionally equivalent and pin-compatible. Other options include the NT5CB256M16CP-DII (newer revision) and cross-brand equivalents like Micron MT41K256M16HA-125 and Samsung K4B4G1646E-BYMA, all in 96-ball TFBGA with similar timing.
Can NT5CB256M16CP-DI be used in industrial temperature applications?
Yes, the NT5CB256M16CP-DI is rated for industrial temperature range from -40°C to +95°C. This makes it suitable for industrial automation, networking equipment, and other applications that require reliable operation in harsh environments. The automotive variant extends to +105°C.
What is the difference between NT5CB256M16CP-DI and NT5CB128M8CP-DI?
The NT5CB256M16CP-DI is a 4Gb DDR3L SDRAM organized as 256Mx16, while the NT5CB128M8CP-DI is a 1Gb DDR3L SDRAM organized as 128Mx8. The -DI has double the density and a wider data bus, making it suitable for applications requiring more memory and higher bandwidth. They are not pin-compatible due to different organizations.

Data referensi engineering untuk NT5CB256M16CP-DI — pembandingan, panduan desain, dan informasi konformitas.

Panduan Pemilihan

Choose the NT5CB256M16CP-DI when you need a 4Gb DDR3L SDRAM with automotive-grade reliability and wide temperature range. It is ideal for automotive infotainment, ADAS, and industrial applications where AEC-Q100 qualification is required. If you do not need automotive qualification, the NT5CB256M16DP-DI offers a cost-effective alternative with the same package and pinout. For designs requiring the latest revision, the NT5CB256M16CP-DII provides improved timing. Cross-brand options like Micron MT41K256M16HA-125 and Samsung K4B4G1646E-BYMA are pin-compatible but may have different temperature grades and availability. Evaluate your specific temperature and reliability requirements before selecting an alternative.

Pembandingan dengan Alternatif

Parameter Umum Produk Ini NT5CB256M16DP-DI NT5CB256M16CP-DII MT41K256M16HA-125 K4B4G1646E-BYMA IS43TR16512B-125K
Package TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Corporation Nanya Technology Corporation Nanya Technology Corporation Micron Technology Samsung Electronics ISSI
Density 4 Gb 4 Gb 4 Gb 4 Gb 4 Gb 4 Gb
Organization 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16 256M x 16
Supply Voltage 1.35V 1.35V 1.35V 1.35V 1.35V 1.35V
Data Rate 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps 1600 Mbps
Operating Temperature -40°C to +95°C (industrial), -40°C to +105°C (automotive) -40°C to +95°C (industrial), -40°C to +105°C (automotive) -40°C to +95°C (industrial), -40°C to +105°C (automotive) 0°C to +95°C (commercial), -40°C to +95°C (industrial) 0°C to +95°C (commercial), -40°C to +95°C (industrial) 0°C to +95°C (commercial), -40°C to +95°C (industrial)
CAS Latency 5-11 5-11 5-11 5-11 5-11 5-11

Diferensiator Kunci

  • Automotive temperature range up to +105°C (vsMT41K256M16HA-125)
  • AEC-Q100 qualified (vsK4B4G1646E-BYMA)
  • Wide operating temperature range (vsIS43TR16512B-125K)

Catatan Desain

For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within +/-20 mils for data groups and +/-50 mils for address/command. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.

The NT5CB256M16CP-DI requires a stable 1.35V supply (VDD and VDDQ) and a reference voltage (VREF) at 0.675V (half of VDD). Use a low-noise LDO or a dedicated DDR3L power solution to provide these rails. Ensure the power supply can handle peak current spikes during read/write operations. Place bulk capacitors (10uF) near the memory power pins and add ferrite beads to isolate VDDQ from VDD if needed.

The TFBGA-96 package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications up to 95°C ambient, ensure adequate airflow or a heatsink if the memory is heavily accessed. The maximum junction temperature is 115°C for industrial grade. Calculate power dissipation based on operating frequency and load; typical DDR3L power is around 1-2W for 4Gb at 1600 Mbps. Provide thermal vias under the package to improve heat dissipation.

Informasi Konformitas

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Bebas Logam Lengket
Yes
Bebas Halogena
Unknown
Mineral Konflik
Compliant

RoHS and REACH compliant per Abacus Technologies. AEC-Q100 qualified for automotive applications. Conflict-free per DRC status.

Data disahkan pada: 2026-08-18 — data disahkan dan disusun oleh tim engineering komponen XAIPART

Pencarian Terkait

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