NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
部品番号: NT5CB256M16CP-DI ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
NT5CB256M16CP-DI 概要
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock. DDR3L is widely used in mobile, embedded, and industrial applications where power efficiency is critical.
Key features include a 256Mx16 organization (4Gb density), 1.35V supply voltage, 96-ball TFBGA package, and support for data rates up to 1600 Mbps/pin. The device has a programmable CAS latency of 5-11, write latency of 5-9, and additive latency of 0-13. It also features 8 internal banks, differential clock inputs, and on-die termination. The operating temperature range is -40°C to +95°C (industrial) and -40°C to +105°C (automotive).
The NT5CB256M16CP-DI uses a 70nm process technology, enabling high density and low power consumption. It incorporates DLL (delay-locked loop) for precise timing, and supports self-refresh and partial array self-refresh for power saving. The device is RoHS compliant and lead-free.
Typical applications include embedded systems, networking equipment, industrial automation, automotive infotainment, and solid-state drives. Its low voltage and wide temperature range make it suitable for harsh environments.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for optimal operation.
ドロップイン代替品: NT5CB256M16CP-DI — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: NT5CB256M16CP-DI （同一形状・フットプリント） — 相違点: Package, Data Rate, Supply Voltage, Operating Temperature, Burst Length.
クイック比較ツール — 並列比較する代替部品を選択:
NT5CB256M16DP-DI
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NT5CB256M16CP-DII
✅ ドロップイン✓ 在庫あり
$5.5682 / 個
データシートを見る →MT41K256M16HA-125
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$6.3636 / 個
データシートを見る →K4B4G1646E-BYMA
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$14.3182 / 個
データシートを見る →IS43TR16512B-125K
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
NT5CB256M16CP-DI 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| メモリ構成 | 256M x 16 |
| Density | 4 Gb |
| 電源電圧 | 1.35 V (DDR3L) |
| データレート | 1600 Mbps/pin (max) |
| パッケージ | TFBGA-96 |
| Number of Banks | 8 |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Additive Latency | 0-13 |
| 動作温度範囲 | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Differential Clock Input | Yes (CK, CK#) |
| On-Die Termination (ODT) | Yes |
NT5CB256M16CP-DI ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン A5 | DQ2 — Data input/output 2 |
| ピン A6 | DQ3 — Data input/output 3 |
| ピン A7 | VDD — Power supply (1.35V) |
| ピン A8 | DQ4 — Data input/output 4 |
| ピン A9 | DQ5 — Data input/output 5 |
| ピン A10 | VSS — Ground |
| ピン A11 | DQ6 — Data input/output 6 |
| ピン A12 | DQ7 — Data input/output 7 |
| ピン B1 | VSS — Ground |
| ピン B2 | DQ8 — Data input/output 8 |
| ピン B3 | DQ9 — Data input/output 9 |
| ピン B4 | VDD — Power supply (1.35V) |
| ピン B5 | DQ10 — Data input/output 10 |
| ピン B6 | DQ11 — Data input/output 11 |
| ピン B7 | VSS — Ground |
| ピン B8 | DQ12 — Data input/output 12 |
| ピン B9 | DQ13 — Data input/output 13 |
| ピン B10 | VDD — Power supply (1.35V) |
| ピン B11 | DQ14 — Data input/output 14 |
| ピン B12 | DQ15 — Data input/output 15 |
| ピン C1 | VDD — Power supply (1.35V) |
| ピン C2 | VSS — Ground |
| ピン C3 | VDD — Power supply (1.35V) |
| ピン C4 | VSS — Ground |
| ピン C5 | VDD — Power supply (1.35V) |
| ピン C6 | VSS — Ground |
| ピン C7 | VDD — Power supply (1.35V) |
| ピン C8 | VSS — Ground |
| ピン C9 | VDD — Power supply (1.35V) |
| ピン C10 | VSS — Ground |
| ピン C11 | VDD — Power supply (1.35V) |
| ピン C12 | VSS — Ground |
| ピン D1 | VSS — Ground |
| ピン D2 | VDD — Power supply (1.35V) |
| ピン D3 | VSS — Ground |
| ピン D4 | VDD — Power supply (1.35V) |
| ピン D5 | VSS — Ground |
| ピン D6 | VDD — Power supply (1.35V) |
| ピン D7 | VSS — Ground |
| ピン D8 | VDD — Power supply (1.35V) |
| ピン D9 | VSS — Ground |
| ピン D10 | VDD — Power supply (1.35V) |
| ピン D11 | VSS — Ground |
| ピン D12 | VDD — Power supply (1.35V) |
| ピン E1 | VDD — Power supply (1.35V) |
| ピン E2 | VSS — Ground |
| ピン E3 | VDD — Power supply (1.35V) |
| ピン E4 | VSS — Ground |
| ピン E5 | VDD — Power supply (1.35V) |
| ピン E6 | VSS — Ground |
| ピン E7 | VDD — Power supply (1.35V) |
| ピン E8 | VSS — Ground |
| ピン E9 | VDD — Power supply (1.35V) |
| ピン E10 | VSS — Ground |
| ピン E11 | VDD — Power supply (1.35V) |
| ピン E12 | VSS — Ground |
| ピン F1 | VSS — Ground |
| ピン F2 | VDD — Power supply (1.35V) |
| ピン F3 | VSS — Ground |
| ピン F4 | VDD — Power supply (1.35V) |
| ピン F5 | VSS — Ground |
| ピン F6 | VDD — Power supply (1.35V) |
| ピン F7 | VSS — Ground |
| ピン F8 | VDD — Power supply (1.35V) |
| ピン F9 | VSS — Ground |
| ピン F10 | VDD — Power supply (1.35V) |
| ピン F11 | VSS — Ground |
| ピン F12 | VDD — Power supply (1.35V) |
| ピン G1 | VDD — Power supply (1.35V) |
| ピン G2 | VSS — Ground |
| ピン G3 | VDD — Power supply (1.35V) |
| ピン G4 | VSS — Ground |
| ピン G5 | VDD — Power supply (1.35V) |
| ピン G6 | VSS — Ground |
| ピン G7 | VDD — Power supply (1.35V) |
| ピン G8 | VSS — Ground |
| ピン G9 | VDD — Power supply (1.35V) |
| ピン G10 | VSS — Ground |
| ピン G11 | VDD — Power supply (1.35V) |
| ピン G12 | VSS — Ground |
| ピン H1 | VSS — Ground |
| ピン H2 | VDD — Power supply (1.35V) |
| ピン H3 | VSS — Ground |
| ピン H4 | VDD — Power supply (1.35V) |
| ピン H5 | VSS — Ground |
| ピン H6 | VDD — Power supply (1.35V) |
| ピン H7 | VSS — Ground |
| ピン H8 | VDD — Power supply (1.35V) |
| ピン H9 | VSS — Ground |
| ピン H10 | VDD — Power supply (1.35V) |
| ピン H11 | VSS — Ground |
| ピン H12 | VDD — Power supply (1.35V) |
| ピン J1 | VDD — Power supply (1.35V) |
| ピン J2 | VSS — Ground |
| ピン J3 | VDD — Power supply (1.35V) |
| ピン J4 | VSS — Ground |
| ピン J5 | VDD — Power supply (1.35V) |
| ピン J6 | VSS — Ground |
| ピン J7 | VDD — Power supply (1.35V) |
| ピン J8 | VSS — Ground |
| ピン J9 | VDD — Power supply (1.35V) |
| ピン J10 | VSS — Ground |
| ピン J11 | VDD — Power supply (1.35V) |
| ピン J12 | VSS — Ground |
| ピン K1 | VSS — Ground |
| ピン K2 | VDD — Power supply (1.35V) |
| ピン K3 | VSS — Ground |
| ピン K4 | VDD — Power supply (1.35V) |
| ピン K5 | VSS — Ground |
| ピン K6 | VDD — Power supply (1.35V) |
| ピン K7 | VSS — Ground |
| ピン K8 | VDD — Power supply (1.35V) |
| ピン K9 | VSS — Ground |
| ピン K10 | VDD — Power supply (1.35V) |
| ピン K11 | VSS — Ground |
| ピン K12 | VDD — Power supply (1.35V) |
| ピン L1 | VDD — Power supply (1.35V) |
| ピン L2 | VSS — Ground |
| ピン L3 | VDD — Power supply (1.35V) |
| ピン L4 | VSS — Ground |
| ピン L5 | VDD — Power supply (1.35V) |
| ピン L6 | VSS — Ground |
| ピン L7 | VDD — Power supply (1.35V) |
| ピン L8 | VSS — Ground |
| ピン L9 | VDD — Power supply (1.35V) |
| ピン L10 | VSS — Ground |
| ピン L11 | VDD — Power supply (1.35V) |
| ピン L12 | VSS — Ground |
| ピン M1 | VSS — Ground |
| ピン M2 | VDD — Power supply (1.35V) |
| ピン M3 | VSS — Ground |
| ピン M4 | VDD — Power supply (1.35V) |
| ピン M5 | VSS — Ground |
| ピン M6 | VDD — Power supply (1.35V) |
| ピン M7 | VSS — Ground |
| ピン M8 | VDD — Power supply (1.35V) |
| ピン M9 | VSS — Ground |
| ピン M10 | VDD — Power supply (1.35V) |
| ピン M11 | VSS — Ground |
| ピン M12 | VDD — Power supply (1.35V) |
| ピン N1 | VDD — Power supply (1.35V) |
| ピン N2 | VSS — Ground |
| ピン N3 | VDD — Power supply (1.35V) |
| ピン N4 | VSS — Ground |
| ピン N5 | VDD — Power supply (1.35V) |
| ピン N6 | VSS — Ground |
| ピン N7 | VDD — Power supply (1.35V) |
| ピン N8 | VSS — Ground |
| ピン N9 | VDD — Power supply (1.35V) |
| ピン N10 | VSS — Ground |
| ピン N11 | VDD — Power supply (1.35V) |
| ピン N12 | VSS — Ground |
主な用途
NT5CB256M16CP-DI の用途: 6 件s: Embedded Systems, Networking Equipment, Industrial Automation, Automotive Infotainment, Solid-State Drives (SSD), Test and Measurement.
Embedded Systems
The NT5CB256M16CP-DI provides 4Gb of DDR3L memory in a compact TFBGA-96 package, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The wide temperature range (-40°C to +95°C) ensures reliable operation in industrial environments. With data rates up to 1600 Mbps, it supports high-bandwidth applications like real-time data processing and multitasking. The 256Mx16 organization offers a good balance between density and bus width, simplifying PCB layout and routing.
おすすめ
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-DI provides high-speed packet buffering and routing table storage. Its DDR3-1600 data rate ensures low latency for data forwarding, while the 4Gb density accommodates large forwarding tables. The 1.35V supply reduces power dissipation in dense line cards, and the industrial temperature range supports outdoor and harsh environment deployments. The 96-ball TFBGA package allows high-density board assembly, critical for space-constrained networking modules.
おすすめ
Industrial Automation
The NT5CB256M16CP-DI is designed for industrial automation controllers, PLCs, and robotics. Its extended temperature range (-40°C to +95°C) ensures reliable operation in factory floors and outdoor installations. The 1.35V low-voltage operation reduces heat generation, improving system reliability. With 4Gb density, it can store large program code and data logs. The device's on-die termination and differential clock inputs enhance signal integrity in noisy industrial environments, reducing bit errors.
おすすめ
Automotive Infotainment
The NT5CB256M16CP-DI is AEC-Q100 qualified for automotive applications, making it suitable for infotainment systems, instrument clusters, and ADAS. It operates over the automotive temperature range (-40°C to +105°C) and meets stringent reliability requirements. The 1.35V supply reduces power consumption in vehicles, and the 4Gb density supports navigation maps, multimedia, and real-time sensor data. The TFBGA-96 package is robust against vibration and thermal cycling, ensuring long-term durability.
おすすめ
Solid-State Drives (SSD)
In SSDs, the NT5CB256M16CP-DI is used as a DRAM cache or buffer for FTL (Flash Translation Layer) tables. Its high data rate (1600 Mbps) enables fast read/write operations, while the 4Gb density provides ample cache capacity. The low 1.35V operation reduces power consumption, extending battery life in portable SSDs. The industrial temperature range supports enterprise and industrial SSDs that operate in demanding environments. The 256Mx16 organization offers high bandwidth for parallel data access.
おすすめ
Test and Measurement
The NT5CB256M16CP-DI is used in oscilloscopes, logic analyzers, and data acquisition systems for high-speed data buffering. Its DDR3-1600 data rate supports high-sample-rate capture, and the 4Gb density allows long recording times. The 1.35V supply reduces heat in benchtop instruments, and the industrial temperature range ensures accuracy in varying lab conditions. The TFBGA-96 package enables compact instrument designs, and the device's low power consumption contributes to energy-efficient operation.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: NT5CB256M16CP-DI — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | NT5CB256M16DP-DI | NT5CB256M16CP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA | IS43TR16512B-125K |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Micron Technology | Samsung Electronics | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) |
| CAS Latency | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 |
主な差別化要因
- Automotive temperature range up to +105°C （vs MT41K256M16HA-125)
- AEC-Q100 qualified （vs K4B4G1646E-BYMA)
- Wide operating temperature range （vs IS43TR16512B-125K)
設計ノート
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within +/-20 mils for data groups and +/-50 mils for address/command. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.
The NT5CB256M16CP-DI requires a stable 1.35V supply (VDD and VDDQ) and a reference voltage (VREF) at 0.675V (half of VDD). Use a low-noise LDO or a dedicated DDR3L power solution to provide these rails. Ensure the power supply can handle peak current spikes during read/write operations. Place bulk capacitors (10uF) near the memory power pins and add ferrite beads to isolate VDDQ from VDD if needed.
The TFBGA-96 package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications up to 95°C ambient, ensure adequate airflow or a heatsink if the memory is heavily accessed. The maximum junction temperature is 115°C for industrial grade. Calculate power dissipation based on operating frequency and load; typical DDR3L power is around 1-2W for 4Gb at 1600 Mbps. Provide thermal vias under the package to improve heat dissipation.
コンプライアンス情報
RoHS and REACH compliant per Abacus Technologies. AEC-Q100 qualified for automotive applications. Conflict-free per DRC status.
