NT5CB256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Référence : NT5CB256M16CP-DI ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
NT5CB256M16CP-DI Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock. DDR3L is widely used in mobile, embedded, and industrial applications where power efficiency is critical.
Key features include a 256Mx16 organization (4Gb density), 1.35V supply voltage, 96-ball TFBGA package, and support for data rates up to 1600 Mbps/pin. The device has a programmable CAS latency of 5-11, write latency of 5-9, and additive latency of 0-13. It also features 8 internal banks, differential clock inputs, and on-die termination. The operating temperature range is -40°C to +95°C (industrial) and -40°C to +105°C (automotive).
The NT5CB256M16CP-DI uses a 70nm process technology, enabling high density and low power consumption. It incorporates DLL (delay-locked loop) for precise timing, and supports self-refresh and partial array self-refresh for power saving. The device is RoHS compliant and lead-free.
Typical applications include embedded systems, networking equipment, industrial automation, automotive infotainment, and solid-state drives. Its low voltage and wide temperature range make it suitable for harsh environments.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for optimal operation.
Alternatives de remplacement direct pour NT5CB256M16CP-DI — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CB256M16CP-DI (même facteur de forme et même empreinte) — différant par Package, Data Rate, Supply Voltage, Operating Temperature, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CB256M16DP-DI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CB256M16CP-DII
✅ Remplacement direct✓ En stock
$5.5682 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125K
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CB256M16CP-DI Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Organisation de la mémoire | 256M x 16 |
| Density | 4 Gb |
| Tension d'alimentation | 1.35 V (DDR3L) |
| Débit de données | 1600 Mbps/pin (max) |
| Boîtier | TFBGA-96 |
| Number of Banks | 8 |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 |
| Additive Latency | 0-13 |
| Plage de température de fonctionnement | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Differential Clock Input | Yes (CK, CK#) |
| On-Die Termination (ODT) | Yes |
Configuration des broches de NT5CB256M16CP-DI
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.35V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply (1.35V) |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply (1.35V) |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply (1.35V) |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply (1.35V) |
| Broche C4 | VSS — Ground |
| Broche C5 | VDD — Power supply (1.35V) |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply (1.35V) |
| Broche C8 | VSS — Ground |
| Broche C9 | VDD — Power supply (1.35V) |
| Broche C10 | VSS — Ground |
| Broche C11 | VDD — Power supply (1.35V) |
| Broche C12 | VSS — Ground |
| Broche D1 | VSS — Ground |
| Broche D2 | VDD — Power supply (1.35V) |
| Broche D3 | VSS — Ground |
| Broche D4 | VDD — Power supply (1.35V) |
| Broche D5 | VSS — Ground |
| Broche D6 | VDD — Power supply (1.35V) |
| Broche D7 | VSS — Ground |
| Broche D8 | VDD — Power supply (1.35V) |
| Broche D9 | VSS — Ground |
| Broche D10 | VDD — Power supply (1.35V) |
| Broche D11 | VSS — Ground |
| Broche D12 | VDD — Power supply (1.35V) |
| Broche E1 | VDD — Power supply (1.35V) |
| Broche E2 | VSS — Ground |
| Broche E3 | VDD — Power supply (1.35V) |
| Broche E4 | VSS — Ground |
| Broche E5 | VDD — Power supply (1.35V) |
| Broche E6 | VSS — Ground |
| Broche E7 | VDD — Power supply (1.35V) |
| Broche E8 | VSS — Ground |
| Broche E9 | VDD — Power supply (1.35V) |
| Broche E10 | VSS — Ground |
| Broche E11 | VDD — Power supply (1.35V) |
| Broche E12 | VSS — Ground |
| Broche F1 | VSS — Ground |
| Broche F2 | VDD — Power supply (1.35V) |
| Broche F3 | VSS — Ground |
| Broche F4 | VDD — Power supply (1.35V) |
| Broche F5 | VSS — Ground |
| Broche F6 | VDD — Power supply (1.35V) |
| Broche F7 | VSS — Ground |
| Broche F8 | VDD — Power supply (1.35V) |
| Broche F9 | VSS — Ground |
| Broche F10 | VDD — Power supply (1.35V) |
| Broche F11 | VSS — Ground |
| Broche F12 | VDD — Power supply (1.35V) |
| Broche G1 | VDD — Power supply (1.35V) |
| Broche G2 | VSS — Ground |
| Broche G3 | VDD — Power supply (1.35V) |
| Broche G4 | VSS — Ground |
| Broche G5 | VDD — Power supply (1.35V) |
| Broche G6 | VSS — Ground |
| Broche G7 | VDD — Power supply (1.35V) |
| Broche G8 | VSS — Ground |
| Broche G9 | VDD — Power supply (1.35V) |
| Broche G10 | VSS — Ground |
| Broche G11 | VDD — Power supply (1.35V) |
| Broche G12 | VSS — Ground |
| Broche H1 | VSS — Ground |
| Broche H2 | VDD — Power supply (1.35V) |
| Broche H3 | VSS — Ground |
| Broche H4 | VDD — Power supply (1.35V) |
| Broche H5 | VSS — Ground |
| Broche H6 | VDD — Power supply (1.35V) |
| Broche H7 | VSS — Ground |
| Broche H8 | VDD — Power supply (1.35V) |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply (1.35V) |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply (1.35V) |
| Broche J1 | VDD — Power supply (1.35V) |
| Broche J2 | VSS — Ground |
| Broche J3 | VDD — Power supply (1.35V) |
| Broche J4 | VSS — Ground |
| Broche J5 | VDD — Power supply (1.35V) |
| Broche J6 | VSS — Ground |
| Broche J7 | VDD — Power supply (1.35V) |
| Broche J8 | VSS — Ground |
| Broche J9 | VDD — Power supply (1.35V) |
| Broche J10 | VSS — Ground |
| Broche J11 | VDD — Power supply (1.35V) |
| Broche J12 | VSS — Ground |
| Broche K1 | VSS — Ground |
| Broche K2 | VDD — Power supply (1.35V) |
| Broche K3 | VSS — Ground |
| Broche K4 | VDD — Power supply (1.35V) |
| Broche K5 | VSS — Ground |
| Broche K6 | VDD — Power supply (1.35V) |
| Broche K7 | VSS — Ground |
| Broche K8 | VDD — Power supply (1.35V) |
| Broche K9 | VSS — Ground |
| Broche K10 | VDD — Power supply (1.35V) |
| Broche K11 | VSS — Ground |
| Broche K12 | VDD — Power supply (1.35V) |
| Broche L1 | VDD — Power supply (1.35V) |
| Broche L2 | VSS — Ground |
| Broche L3 | VDD — Power supply (1.35V) |
| Broche L4 | VSS — Ground |
| Broche L5 | VDD — Power supply (1.35V) |
| Broche L6 | VSS — Ground |
| Broche L7 | VDD — Power supply (1.35V) |
| Broche L8 | VSS — Ground |
| Broche L9 | VDD — Power supply (1.35V) |
| Broche L10 | VSS — Ground |
| Broche L11 | VDD — Power supply (1.35V) |
| Broche L12 | VSS — Ground |
| Broche M1 | VSS — Ground |
| Broche M2 | VDD — Power supply (1.35V) |
| Broche M3 | VSS — Ground |
| Broche M4 | VDD — Power supply (1.35V) |
| Broche M5 | VSS — Ground |
| Broche M6 | VDD — Power supply (1.35V) |
| Broche M7 | VSS — Ground |
| Broche M8 | VDD — Power supply (1.35V) |
| Broche M9 | VSS — Ground |
| Broche M10 | VDD — Power supply (1.35V) |
| Broche M11 | VSS — Ground |
| Broche M12 | VDD — Power supply (1.35V) |
| Broche N1 | VDD — Power supply (1.35V) |
| Broche N2 | VSS — Ground |
| Broche N3 | VDD — Power supply (1.35V) |
| Broche N4 | VSS — Ground |
| Broche N5 | VDD — Power supply (1.35V) |
| Broche N6 | VSS — Ground |
| Broche N7 | VDD — Power supply (1.35V) |
| Broche N8 | VSS — Ground |
| Broche N9 | VDD — Power supply (1.35V) |
| Broche N10 | VSS — Ground |
| Broche N11 | VDD — Power supply (1.35V) |
| Broche N12 | VSS — Ground |
Applications typiques
NT5CB256M16CP-DI convient pour 6 applications: Embedded Systems, Networking Equipment, Industrial Automation, Automotive Infotainment, Solid-State Drives (SSD), Test and Measurement.
Embedded Systems
The NT5CB256M16CP-DI provides 4Gb of DDR3L memory in a compact TFBGA-96 package, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The wide temperature range (-40°C to +95°C) ensures reliable operation in industrial environments. With data rates up to 1600 Mbps, it supports high-bandwidth applications like real-time data processing and multitasking. The 256Mx16 organization offers a good balance between density and bus width, simplifying PCB layout and routing.
Recommandé
Networking Equipment
In networking switches and routers, the NT5CB256M16CP-DI provides high-speed packet buffering and routing table storage. Its DDR3-1600 data rate ensures low latency for data forwarding, while the 4Gb density accommodates large forwarding tables. The 1.35V supply reduces power dissipation in dense line cards, and the industrial temperature range supports outdoor and harsh environment deployments. The 96-ball TFBGA package allows high-density board assembly, critical for space-constrained networking modules.
Recommandé
Industrial Automation
The NT5CB256M16CP-DI is designed for industrial automation controllers, PLCs, and robotics. Its extended temperature range (-40°C to +95°C) ensures reliable operation in factory floors and outdoor installations. The 1.35V low-voltage operation reduces heat generation, improving system reliability. With 4Gb density, it can store large program code and data logs. The device's on-die termination and differential clock inputs enhance signal integrity in noisy industrial environments, reducing bit errors.
Recommandé
Automotive Infotainment
The NT5CB256M16CP-DI is AEC-Q100 qualified for automotive applications, making it suitable for infotainment systems, instrument clusters, and ADAS. It operates over the automotive temperature range (-40°C to +105°C) and meets stringent reliability requirements. The 1.35V supply reduces power consumption in vehicles, and the 4Gb density supports navigation maps, multimedia, and real-time sensor data. The TFBGA-96 package is robust against vibration and thermal cycling, ensuring long-term durability.
Recommandé
Solid-State Drives (SSD)
In SSDs, the NT5CB256M16CP-DI is used as a DRAM cache or buffer for FTL (Flash Translation Layer) tables. Its high data rate (1600 Mbps) enables fast read/write operations, while the 4Gb density provides ample cache capacity. The low 1.35V operation reduces power consumption, extending battery life in portable SSDs. The industrial temperature range supports enterprise and industrial SSDs that operate in demanding environments. The 256Mx16 organization offers high bandwidth for parallel data access.
Recommandé
Test and Measurement
The NT5CB256M16CP-DI is used in oscilloscopes, logic analyzers, and data acquisition systems for high-speed data buffering. Its DDR3-1600 data rate supports high-sample-rate capture, and the 4Gb density allows long recording times. The 1.35V supply reduces heat in benchtop instruments, and the industrial temperature range ensures accuracy in varying lab conditions. The TFBGA-96 package enables compact instrument designs, and the device's low power consumption contributes to energy-efficient operation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CB256M16CP-DI — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CB256M16DP-DI | NT5CB256M16CP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA | IS43TR16512B-125K |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology Corporation | Nanya Technology Corporation | Nanya Technology Corporation | Micron Technology | Samsung Electronics | ISSI |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) | 0°C to +95°C (commercial), -40°C to +95°C (industrial) |
| CAS Latency | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 | 5-11 |
Principaux différenciateurs
- Automotive temperature range up to +105°C (vs MT41K256M16HA-125)
- AEC-Q100 qualified (vs K4B4G1646E-BYMA)
- Wide operating temperature range (vs IS43TR16512B-125K)
Notes de conception
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and clock signals. Keep trace lengths matched within +/-20 mils for data groups and +/-50 mils for address/command. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.
The NT5CB256M16CP-DI requires a stable 1.35V supply (VDD and VDDQ) and a reference voltage (VREF) at 0.675V (half of VDD). Use a low-noise LDO or a dedicated DDR3L power solution to provide these rails. Ensure the power supply can handle peak current spikes during read/write operations. Place bulk capacitors (10uF) near the memory power pins and add ferrite beads to isolate VDDQ from VDD if needed.
The TFBGA-96 package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications up to 95°C ambient, ensure adequate airflow or a heatsink if the memory is heavily accessed. The maximum junction temperature is 115°C for industrial grade. Calculate power dissipation based on operating frequency and load; typical DDR3L power is around 1-2W for 4Gb at 1600 Mbps. Provide thermal vias under the package to improve heat dissipation.
Informations de conformité
RoHS and REACH compliant per Abacus Technologies. AEC-Q100 qualified for automotive applications. Conflict-free per DRC status.
