IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon
部品番号: IPG16N10S461AATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.94 | $940.00 |
| 3,000 | $0.82 | $2,460.00 |
IPG16N10S461AATMA1 概要
What is a dual MOSFET array? A dual MOSFET array is a discrete-semiconductor component that places two independent MOSFETs (often in half-bridge or dual-N topology) inside one package, allowing the designer to halve PCB area, shorten the high-current loop, and reduce parasitic inductance versus two discrete transistors. It belongs to the broader taxonomy of MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor, and is widely used in synchronous rectification, DC-DC converter switching stages, and motor-driver half-bridges where compactness and thermal coupling matter.
Key features of this part include: 100V drain-source breakdown, low R_DS(on) of 61 mΩ (typ.) at V_GS = 10V for low conduction loss, integrated gate-source protection, low gate charge for fast switching, and a Wettable Flank PG-TDSON-8-10 footprint that supports automated optical inspection (AOI) on the solder joints. The 8-pin leadless package also exposes a thermal pad that delivers a junction-to-case thermal resistance suitable for high-current switching stages.
Technically, the device is built on Infineon's OptiMOS™ trench technology, which minimizes on-resistance per unit silicon area and reduces the figure of merit (FOM = R_DS(on) × Q_G). The internal co-pack of two identical dies simplifies synchronous buck/boost or half-bridge designs in 48V automotive and industrial power conversion where board space is at a premium.
Typical applications include 48V to 12V DC-DC converter switching stages (telecom and computing), motor-driver H-bridges (e.g., e-bike and small-EV auxiliary drives), battery management system (BMS) protection FETs, and industrial solenoid/relay driver outputs. The 100V rating also suits industrial 24V/36V/48V bus rails, providing generous transient headroom for inductive kick and back-EMF events.
When designing with this dual MOSFET array, ensure that both gates are driven with matched gate resistors to prevent shoot-through in half-bridge configurations. The exposed pad must be soldered to a sufficient copper area (typically ≥1 cm²) to keep junction temperature rise within safe limits under continuous high-current operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers compare the IPG16N10S461AATMA1 against same-package Infineon and competitor parts in a single reference.
ドロップイン代替品: IPG16N10S461AATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPG16N10S461AATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, FET Type, Drain-to-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
IPG16N10S4L61AATMA1
✅ ドロップイン✓ 在庫あり
$1.12 / 個
データシートを見る →IAUCN10S7N021ATMA1
✅ ドロップイン✓ 在庫あり
$2.05 / 個
データシートを見る →BSC0906NSATMA1
✅ ドロップイン✓ 在庫あり
$0.48 / 個
データシートを見る →BSC0902NSIATMA1
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IPG20N06S4L14AATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IPG16N10S461AATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array |
| Technology | OptiMOS™ trench |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 16 A |
| On-Resistance R_DS(on) typ. | 61 mΩ |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) |
| Configuration | 2 N-Channel (Dual, separate) |
| Maximum Junction Temperature | 175 °C |
| 動作温度範囲 | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8-10 (Wettable Flank) |
| 実装タイプ | Surface Mount |
| Terminal Count | 8 |
| RoHS ステータス | Compliant |
| Built-in Body Diode | Yes |
| Channel Mode | Enhancement |
IPG16N10S461AATMA1 ピン構成
| ピン 1 | G1 — Gate of MOSFET 1 |
| ピン 2 | S1 — Source of MOSFET 1 |
| ピン 3 | S1 — Source of MOSFET 1 (parallel bond pad) |
| ピン 4 | D1 — Drain of MOSFET 1 / exposed thermal pad (left) |
| ピン 5 | D2 — Drain of MOSFET 2 / exposed thermal pad (right) |
| ピン 6 | S2 — Source of MOSFET 2 (parallel bond pad) |
| ピン 7 | S2 — Source of MOSFET 2 |
| ピン 8 | G2 — Gate of MOSFET 2 |
安全動作領域 (DC, T_C = 25°C)
主な用途
IPG16N10S461AATMA1 の用途: 6 件s: 48V to 12V DC-DC Converter (Synchronous Stage), Motor-Driver Half-Bridge / H-Bridge (48V Auxiliary Drives), Battery Management System (BMS) Protection FETs, Industrial Solenoid / Relay Driver Outputs, Telecom Hot-Swap / OR-ing Controller Switch, Solar Micro-Inverter / Power Optimizer Switches.
48V to 12V DC-DC Converter (Synchronous Stage)
The IPG16N10S461AATMA1 fits the synchronous-rectification stage of 48V→12V DC-DC converters commonly used in mild-hybrid vehicles, telecom base-station intermediate bus converters, and 48V server/industrial point-of-load rails. With 100V VDS the device offers ≥2× headroom over the nominal 48V bus, easily absorbing load-dump and motor-regeneration transients that can momentarily spike to 60-70V. Each of the two 16A-rated MOSFETs handles up to ~200W of switching power at 61 mΩ R_DS(on), giving ~92-94% efficiency at moderate switching frequencies (100-300 kHz) when paired with a properly sized gate driver. The PG-TDSON-8-10 wettable-flank package supports AOI, which is essential for automotive-grade converters where solder-joint inspection is mandatory before conformal coating or pot-and-pour potting. Design tip: keep the high-side/low-side gate-loop traces short and symmetric to minimize shoot-through risk in the half-bridge leg.
おすすめ
Motor-Driver Half-Bridge / H-Bridge (48V Auxiliary Drives)
For low-voltage industrial and light-EV motor-drive stages — e-bike controllers, e-scooter drives, small 48V brushless-DC pumps, and AGV/AMR wheel motors — the IPG16N10S461AATMA1's dual-N topology maps directly onto the high-side and low-side switch positions of a half-bridge leg, or onto one leg of a three-phase inverter (with a third discrete FET). At 16A continuous and 100V VDS, this MOSFET array comfortably drives a 1-2 kW motor with adequate thermal margin when the exposed pad is soldered to ≥1 cm² of 2 oz copper on the PCB. The OptiMOS™ trench design minimizes switching loss during PWM cycles (typical 16-25 kHz motor PWM), reducing heatsink size and prolonging battery runtime in mobile applications.
おすすめ
Battery Management System (BMS) Protection FETs
In 48V battery packs (LFP, NMC, or NMC-blend 14-17S architectures), the IPG16N10S461AATMA1 can serve as back-to-back protection FETs or as charge/discharge control switches. The 100V VDS rating covers fully-charged 17S NMC (~71V) with margin for transient overvoltage events, while the 61 mΩ R_DS(on) keeps conduction loss under 1% at typical pack currents of 8-10A per protection path. Using the dual-N configuration, one package provides both the high-side disconnect and the low-side disconnect paths, halving the PCB footprint compared with two discrete DPAK FETs. Pair the device with a BMS AFE such as the TLE8444SLXUMA1 or similar for cell-voltage monitoring + temperature-aware disconnect logic.
おすすめ
Industrial Solenoid / Relay Driver Outputs
The IPG16N10S461AATMA1 is well-suited as a low-side or high-side switch for 24V/36V/48V industrial solenoid valves, pneumatic actuators, and high-current relay coils. Each 16A channel can sink/source enough current for multi-coil bank drivers, while the 100V breakdown gives substantial safety margin against the inductive kick spikes that solenoids generate on turn-off. The wettable-flank package supports AOI, which is increasingly required in IPC-A-610 Class 2/3 industrial-automation assembly lines. For functional-safety (SIL-rated) PLC output modules, the dual-N configuration lets one channel act as a primary switch and the other as a diagnostic mirror switch for stuck-open/stuck-shorted detection.
おすすめ
Telecom Hot-Swap / OR-ing Controller Switch
In 48V telecom rectifiers and -48V/-60V telecom bus architectures, the IPG16N10S461AATMA1 can function as the series-pass element of a hot-swap controller or as an OR-ing FET for redundant power-supply modules. The 100V VDS comfortably handles telecom -48V bus returns and transient ringing during load-step events on hot-swap insertion. With 61 mΩ R_DS(on) at 16A, the dissipation at full load is approximately 15.6W per FET — manageable on a well-cooled PCB but requires attention to airflow and copper-pour layout. Design tip: pair the MOSFET with an NTC thermistor or onboard temperature sensor for thermal-foldback current limiting during prolonged fault conditions.
おすすめ
Solar Micro-Inverter / Power Optimizer Switches
For low-power solar micro-inverters (typically 300-600W residential units) and module-level power optimizers, the IPG16N10S461AATMA1's dual-N configuration maps cleanly onto the high-side and low-side switches of a HERIC or H5 inverter topology. At 100V VDS it covers string voltages up to about 80V open-circuit (24V battery-based PV systems are easily within range), and at 16A continuous it handles 1-2 kW peak power per phase leg. The OptiMOS™ family is well-known for low reverse-recovery charge (Q_rr), which is critical for high-frequency solar MPPT conversion stages where switching loss directly impacts annual energy yield.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPG16N10S461AATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPG16N10S4L61AATMA1 | IAUCN10S7N021ATMA1 | BSC0906NSATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (same) | PG-TDSON-8-10 (same) | PG-TDSON-8 (same outline) | PG-TDSON-8-10 (same) |
| Topology | Dual N-channel | Dual N-channel | Dual N-channel | Single N-channel | Dual N-channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 60 V |
| Pin Compatibility (drop-in) | Reference | Yes — same pinout | Yes — same pinout | Partial — single-N vs dual-N | Yes — same pinout |
| Approx. Price @ qty 1000 | $0.94 | $0.92 (est.) | $1.05 (est.) | $0.78 (est.) | $0.89 (est.) |
主な差別化要因
- Dual-N in PG-TDSON-8-10 (Wettable Flank) — single-package half-bridge （vs Two discrete IPB020N10N5LFATMA1 single-N DPAK FETs)
- 100V VDS with 16A continuous ID in PG-TDSON-8-10 （vs IPG20N06S4L14AATMA1 (60V VDS))
- OptiMOS™ trench technology — low FOM （vs Older IRFR120NTRPBF planar 100V N-MOSFET (TO-252))
設計ノート
Estimated (input values: ID = 16A per channel, R_DS(on) = 61 mΩ, T_C = 25°C, VGS = 10V): conduction loss per FET is P_cond = I² × R_DS(on) = 16² × 0.061 = 15.6W at full load. With the PG-TDSON-8-10 exposed pad soldered to ≥1 cm² of 2 oz copper on a 4-layer FR4 PCB, expect thermal resistance θJA ≈ 40-45 °C/W, leading to a junction-temperature rise of ~150°C above ambient — only acceptable if ambient is below ~25°C. For continuous high-current operation, increase the copper pour to ≥4 cm² or add an external heatsink; at half load (8A) dissipation drops to ~3.9W per FET and the part runs comfortably without forced air.
In a half-bridge configuration using the two internal MOSFETs as high-side and low-side switches, place gate-driver ICs within 5 mm of the gates and use matched gate-resistor values (typically 10-47 Ω) on both gates to prevent shoot-through caused by V_GS(th) mismatch. Minimize the high-current loop from D1→S1 and D2→S2 by routing copper directly under the package with via-stitching around the thermal pad. The PG-TDSON-8-10 wettable flank requires solder paste coverage on the side flanks — use a stencil aperture design that explicitly targets the flank sidewalls for full AOI inspection.
Common mistakes when using the IPG16N10S461AATMA1 include: (1) under-sizing the gate-driver pull-up — OptiMOS™ devices with low Q_G still need 1-2 A of gate-current capability for sub-20 ns switching; (2) forgetting the internal body diode's reverse-recovery charge (Q_rr) in half-bridge dead-time calculations — allow at least 30-50 ns of dead time to prevent cross-conduction; (3) neglecting the V_GS(th) range — Infineon OptiMOS™ devices typically have V_GS(th) of 1.7-2.5V, so a 3.3V logic-level gate drive is insufficient; use a 10-12V gate drive for guaranteed full enhancement.
For optimal thermal performance, the PG-TDSON-8-10 thermal pad must be soldered to a continuous copper plane that extends at least 1 cm in both directions from the package. Use a 6×6 via-array (0.3 mm via diameter, 0.6 mm pitch) under the thermal pad to sink heat into inner PCB layers. Avoid routing any signal trace or ground plane cutout directly under the package — thermal spreading requires an unbroken copper pour. If the design uses a copper-pour-on-bottom-layer-only thermal strategy, increase the 2 oz copper to 4-layer 2 oz copper or add thermal adhesive to an aluminum backplate.
コンプライアンス情報
RoHS and REACH compliance verified through DigiKey/Mouser listing and Infineon product page; AEC-Q100 status not explicitly stated in the public datasheet excerpt — for automotive safety-critical designs, contact Infineon or refer to the AEC-qualified product folder. Halogen-free status not explicitly verified in the provided data; lead-free confirmed by wettable-flank plating (Pb-free matte tin).
