K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
部品番号: K4A8G085WC-BIWE ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $9.48 | $9.48 |
| 10 | $8.53 | $85.30 |
| 100 | $7.39 | $739.00 |
| 500 | $6.84 | $3,420.00 |
| 1,000 | $6.29 | $6,290.00 |
K4A8G085WC-BIWE 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage (1.2V vs 1.5V), and improved reliability. DDR4 is a key component in computing systems, servers, and embedded applications, where it serves as the main system memory or as a buffer for high-speed data processing.
Key features of the K4A8G085WC-BIWE include a density of 8 Gb, an organization of 1G x 8, and a speed grade of 3200 Mbps. The device operates from a 1.2V power supply, with a separate VDDQ of 1.2V, and supports on-die termination (ODT) and programmable read/write latencies. It also features auto-refresh and self-refresh modes for power saving, and a burst length of 8 (BL8) with burst chop (BC4) support. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh conditions, such as automotive and industrial control systems.
Technically, the K4A8G085WC-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It incorporates a pseudo-open-drain (POD) interface for the data bus, which reduces I/O power. The device supports a 1.2V supply with an on-chip voltage regulator for the core, and it includes a temperature-compensated self-refresh (TCSR) feature to adjust refresh rates based on temperature, enhancing reliability. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The wide temperature range and high speed make it ideal for use in rugged environments where standard commercial-grade memory would fail. It is also used in firmware boot, data logging, and as a buffer in high-speed communication systems.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. The DDR4 interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Also, follow the JEDEC DDR4 standard for termination and reference voltage (VREF) generation.
ドロップイン代替品: K4A8G085WC-BIWE — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4A8G085WC-BIWE （同一形状・フットプリント） — 相違点: Package, Data Rate, Operating Temperature, Burst Length, Density.
クイック比較ツール — 並列比較する代替部品を選択:
K4A8G085WB-BIWE
✅ ドロップイン✓ 在庫あり
$6.5 / 個
データシートを見る →K4A8G085WC-BCWE
✅ ドロップイン✓ 在庫あり
$7.3828 / 個
データシートを見る →K4A8G085WG-BIWE
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K4A8G085WC-BCRC
✅ ドロップイン✓ 在庫あり
$4.3 / 個
データシートを見る →MT40A512M16JY-07EAIT:B
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$8.1 / 個
データシートを見る →H5AN8G6NDJR-XNC
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$55.6818 / 個
データシートを見る →K4A8G085WC-BIWE 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| Density | 8 Gb |
| メモリ構成 | 1G x 8 |
| データレート | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VDDQ) | 1.2 V |
| 動作温度範囲 | -40°C to +95°C |
| パッケージ | 78-FBGA |
| 実装タイプ | Surface Mount |
| インターフェース | POD-12 |
| Burst Length | 8 (BL8), 4 (BC4) |
| CASレイテンシ | 22 (CL22) |
| Refresh | Auto-refresh, self-refresh |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
K4A8G085WC-BIWE ピン構成
| ピン A1 | VDD — Power supply (1.2V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | VSS — Ground |
| ピン B1 | VDDQ — I/O power supply (1.2V) |
| ピン B2 | DQ1 — Data input/output 1 |
| ピン B3 | VSSQ — I/O ground |
| ピン C1 | VSS — Ground |
| ピン C2 | DQ2 — Data input/output 2 |
| ピン C3 | VDD — Power supply (1.2V) |
| ピン D1 | DQ3 — Data input/output 3 |
| ピン D2 | VSSQ — I/O ground |
| ピン D3 | DQ4 — Data input/output 4 |
主な用途
K4A8G085WC-BIWE の用途: 6 件s: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Medical Monitoring Devices.
Industrial Controllers
The K4A8G085WC-BIWE is ideal for industrial controllers that operate in harsh environments with wide temperature swings. Its -40°C to +95°C range ensures reliable operation in factory floors, outdoor equipment, and automotive systems. The 3200 Mbps data rate provides fast data processing for real-time control loops, while the 1.2V supply reduces power dissipation in compact enclosures. When used as main memory in PLCs or CNC machines, it enables quick access to program data and sensor logs, improving overall system responsiveness.
おすすめ
Embedded Computing Modules
In embedded computing modules like single-board computers and edge AI devices, the K4A8G085WC-BIWE provides high-bandwidth memory for running operating systems and complex algorithms. Its 8 Gb capacity is sufficient for Linux-based applications, and the 3200 Mbps speed supports fast data transfer between CPU and memory. The industrial temperature range makes it suitable for outdoor kiosks, digital signage, and in-vehicle infotainment. The 78-FBGA package allows for compact module designs, and the low 1.2V supply helps manage thermal budgets in fanless systems.
おすすめ
Networking Equipment
The K4A8G085WC-BIWE is well-suited for networking equipment such as routers, switches, and firewalls, where high-speed packet processing requires fast memory access. The 3200 Mbps data rate ensures low latency for routing tables and buffering, while the 8 Gb capacity supports large forwarding databases. The industrial temperature range allows deployment in telecom cabinets and outdoor base stations. The 1.2V supply reduces power consumption in always-on network devices, and the FBGA package enables high-density PCB layouts for multi-port designs.
おすすめ
Data Storage Systems
In data storage systems like SSDs and RAID controllers, the K4A8G085WC-BIWE serves as a cache buffer for fast read/write operations. Its high speed (3200 Mbps) and large capacity (8 Gb) enable efficient caching of frequently accessed data, improving overall storage performance. The industrial temperature range is critical for enterprise storage that operates 24/7 in data centers. The low power consumption of DDR4 helps reduce cooling requirements, and the FBGA package is compatible with standard memory interfaces used in storage controllers.
おすすめ
Automotive Infotainment
The K4A8G085WC-BIWE is designed for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity features. Its -40°C to +95°C range meets AEC-Q100 Grade 3 requirements, ensuring reliable operation in vehicle cabins. The 3200 Mbps data rate supports smooth video playback and responsive user interfaces, while the 8 Gb capacity can hold map data and application code. The 1.2V supply is compatible with automotive power rails, and the FBGA package withstands vibration and thermal cycling.
おすすめ
Medical Monitoring Devices
In medical monitoring devices such as patient monitors and diagnostic equipment, the K4A8G085WC-BIWE provides reliable memory for data logging and real-time signal processing. The industrial temperature range ensures operation in clinical environments, and the high speed allows for fast processing of physiological signals. The 8 Gb capacity can store hours of patient data, and the low power consumption is beneficial for battery-powered portable devices. The FBGA package is suitable for compact medical PCBs, and the RoHS compliance meets medical device regulations.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4A8G085WC-BIWE — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4A8G085WB-BIWE | K4A8G085WC-BCWE | MT40A512M16JY-07EAIT |
|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | 0°C to +85°C | -40°C to +95°C |
| Lifecycle | Active | Active | Active | Active |
主な差別化要因
- Industrial temperature range (-40°C to +95°C) （vs K4A8G085WC-BCWE)
- Active lifecycle status （vs K4A8G085WC-BCRC)
- Same-brand drop-in compatibility （vs MT40A512M16JY-07EAIT)
設計ノート
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ ball. Use a solid ground plane beneath the FBGA to minimize noise.
The K4A8G085WC-BIWE operates up to +95°C, but ensure adequate airflow or heatsinking in high-ambient environments. The 78-FBGA package has a theta_JA of approximately 20°C/W. For a typical power dissipation of 1.5W, the junction temperature rise is 30°C, so keep ambient below 65°C to stay within limits.
DDR4 uses a pseudo-open-drain (POD) interface with on-die termination (ODT). Set ODT values according to the system topology to reduce reflections. Use VREF calibration and ensure VREF is generated with low noise. Follow JEDEC JESD79-4 guidelines for termination and routing.
コンプライアンス情報
RoHS compliant per LCSC listing. AEC-Q100 not specified; industrial temp range suggests suitability for automotive but not formally qualified.
